The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Springer-Verlag New York Inc.
978-1-4899-1590-0 (ISBN)
Thermal Oxidation Mechanisms and Modeling: Silicon Oxides and Oxidation; A.M. Stoneham. Novel Oxidation Methods and Characterization: New Approach to Chemically Enhanced Oxidation; R.J. Jaccodine. Deposition and Properties of SiO2: Low Temperature Synthesis and Characterization of Silicon Dioxide Films; G.S. Chakravarthy, et al. Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition: Pre-Gate Oxide Si Surface Control; M. Morita, T. Ohmi. Chemical, Structural, and Microroughness Effects at the SiSiO2 Interface: Dependence of Surface Microroughness on Types of Silicon Substrates; T. Ohmi, et al. Novel Structures, Processes, and Phenomena: Properties of Simox and Related Systems; S. Cristoloveanu, T. Ouisse. Defects and Hot-Carrier Induced Damage in SiSiO2 Systems: Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems. 56 additional articles. Index.
Erscheint lt. Verlag | 19.11.2013 |
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Zusatzinfo | XVI, 503 p. |
Verlagsort | New York |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Naturwissenschaften ► Chemie ► Physikalische Chemie |
Technik ► Elektrotechnik / Energietechnik | |
Technik ► Maschinenbau | |
ISBN-10 | 1-4899-1590-7 / 1489915907 |
ISBN-13 | 978-1-4899-1590-0 / 9781489915900 |
Zustand | Neuware |
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