Defect and Impurity Engineered Semiconductors II: Volume 510
Seiten
2014
Cambridge University Press (Verlag)
978-1-107-41363-4 (ISBN)
Cambridge University Press (Verlag)
978-1-107-41363-4 (ISBN)
- Titel ist leider vergriffen;
keine Neuauflage - Artikel merken
The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems.
The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
Erscheint lt. Verlag | 5.6.2014 |
---|---|
Reihe/Serie | MRS Proceedings |
Verlagsort | Cambridge |
Sprache | englisch |
Maße | 152 x 229 mm |
Gewicht | 920 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
ISBN-10 | 1-107-41363-X / 110741363X |
ISBN-13 | 978-1-107-41363-4 / 9781107413634 |
Zustand | Neuware |
Haben Sie eine Frage zum Produkt? |
Mehr entdecken
aus dem Bereich
aus dem Bereich
Kolbenmaschinen - Strömungsmaschinen - Kraftwerke
Buch | Hardcover (2023)
Hanser (Verlag)
49,99 €