Nanoscale Redox Reaction at Metal/Oxide Interface
Springer Verlag, Japan
978-4-431-54849-2 (ISBN)
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University. His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.
General introduction.- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO.- Surface passivation effect on Schottky contact formation of oxide semiconductors.- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure.- Switching control of oxide-based resistive random access memory by valence state control of oxide.- Combinatorial thin film synthesis for new nanoelectronics materials.- General summary.
Erscheint lt. Verlag | 22.5.2020 |
---|---|
Reihe/Serie | NIMS Monographs |
Zusatzinfo | 51 Illustrations, color; 12 Illustrations, black and white; XI, 89 p. 63 illus., 51 illus. in color. |
Verlagsort | Tokyo |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
Schlagworte | Combinatorial Synthesis • Metal/oxide Interface • plasma surface treatment • Resistive Random Access Memory • Schottky Contact • Surface Electron Accumulation Layer • X-Ray Photoelectron Spectroscopy • X-ray Reflectometry |
ISBN-10 | 4-431-54849-1 / 4431548491 |
ISBN-13 | 978-4-431-54849-2 / 9784431548492 |
Zustand | Neuware |
Haben Sie eine Frage zum Produkt? |
aus dem Bereich