Wide Band Gap Semiconductor Nanowires 1
ISTE Ltd and John Wiley & Sons Inc (Verlag)
978-1-84821-597-9 (ISBN)
of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.
Vincent Consonni is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals. Guy Feuillet is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals.
Preface xi
Part 1 GaN and ZnO Nanowires: Low-Dimensionality Effects 1
Chapter 1 Quantum and Optical Confinement 3
Le Si Dang
Chapter 2 Stress Relaxation in Nanowires with Heterostructures 25
Frank Glas
Chapter 3 Surface-Related Optical Properties of GaN-Based Nanowires 59
Pierre Lefebvre
Chapter 4 Surface Related Optical Properties of ZnO Nanowires 81
Tobias Voss and Jürgen Gutowski
Chapter 5 Doping and Transport 99
Julien Pernot, Fabrice Donatini and Pierre Tchoulfian
Chapter 6 Microstructure of Group III-N Nanowires 125
Achim Trampert, Xiang Kong, Esperanza Luna, Javier Grandal and Bernd Jenichen
Part 2 Nucleation and Growth Mechanisms of GaN and ZnO Nanowires 157
Chapter 7 Ni Collector-Induced Growth of GaN Nanowire on C-Plane Sapphere by Plama-Assisted Molecular Beam Epitaxy 159
Caroline Chèze
Chapter 8 Self-Induced Growth of GaN Nanowires by Molecular Beam Epitaxy 177
Vincent Consonni
Chapter 9 Selective Area Growth of GaN Nanowires by Plama-Assisted Molecular Beam Epitaxy 215
Miguel A Sanchez-Garcia, steven Albert, Ana M. Bengoechea-Encabo, Francesca Barbagini and Enrique Calleja
Chapter 10 Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods 245
Joël Eymery
Chapter 11 Metal-Organic Chemical Vaport Deposition Growth of ZnO Nanowires 265
Vincent Sallet
Chapter 12 Pulsed-Laser Deposition of ZnO Nanowires 303
Christoph Peter Dietrich and Marius Grundmann
Chapter 13 Preparation of ZnO Nanorods and Nanowires by Wet Chemistry 325
Thierry Pauporté
List of Authors 379
Mitarbeit |
Herausgeber (Serie): Robert Baptist |
---|---|
Verlagsort | London |
Sprache | englisch |
Maße | 163 x 241 mm |
Gewicht | 735 g |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Mechanik |
Technik ► Elektrotechnik / Energietechnik | |
ISBN-10 | 1-84821-597-5 / 1848215975 |
ISBN-13 | 978-1-84821-597-9 / 9781848215979 |
Zustand | Neuware |
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