Growth Mechanisms and Novel Properties of Silicon Nanostructures from Quantum-Mechanical Calculations

(Autor)

Buch | Softcover
VIII, 66 Seiten
2013 | 2014
Springer Berlin (Verlag)
978-3-642-40904-2 (ISBN)
53,49 inkl. MwSt
In this volume, Prof. Zhang reviews the systematic theoretical studies in his group on the growth mechanisms and properties of silicon quantum dots, nanotubes and nanowires, including: mechanisms of oxide-assisted growth of silicon nanowires, energetic stability of pristine silicon nanowires and nanotubes, thermal stability of hydrogen terminated silicon nanostructures, size-dependent oxidation of hydrogen terminated silicon nanostructures, excited-state relaxation of hydrogen terminated silicon nanodots, and direct-indirect energy band transitions of silicon nanowires and sheets by surface engineering and straining. He also discusses the potential applications of these findings. This book will mainly benefit those members of the scientific and research community working in nanoscience, surface science, nanomaterials and related fields.

Prof. Zhang is currently a professor at the Department of Physics and Materials Science, City University of Hong Kong. Prof. Zhang’s research area is Computational Materials Physics and Chemistry, including: (1) energetics, kinetics and dynamics of materials nucleation and growth; (2) nano- and micro-structures and related properties of systems in materials science, surface science and chemistry; and (3) development of related methodologies and theories. His recent research focus is on nanoscience, including interactions of nanomaterials with chemical and biological systems, aiming at promoting the applications of nanostructured materials in energy-related and chemical, biological and environmental areas. He has published over 260 papers in internationally refereed journals and 5 book chapters in the areas of Chemical Physics, Materials Science, Condensed Matter Physics and Surface Science. His work has been cited more than 4000 times and his H-index has reached 32. Prof. Zhang has been honored with (1) a Third-class State Natural Science Award of China in 1997, (2) a First-class Award of Scientific and Technological Development of China in 1997, (3) a Friedrich Wilhelm Bessel Research Award (http://www.avh.de/en/programme/preise/index.htm) from the Alexander von Humboldt Foundation, Germany in 2004, and (4) a Second-class State Natural Science Award of China in 2005.

Introduction.- Growth mechanism of silicon nanowires.- Stability of silicon nanostructures.- Novel electronic properties of silicon nanostructures.- Summary and remarks.

Erscheint lt. Verlag 5.12.2013
Reihe/Serie SpringerBriefs in Molecular Science
Zusatzinfo VIII, 66 p. 31 illus., 15 illus. in color.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 134 g
Themenwelt Naturwissenschaften Chemie Physikalische Chemie
Technik Maschinenbau
Schlagworte electron transport • Energy band structures • Growth Mechanism • Phonon transport • Silicon nanostructure • Silicon Nanotubes • Silicon Nanowires • Silicon Quantum Dots • Structural Stability • Surface Engineering
ISBN-10 3-642-40904-0 / 3642409040
ISBN-13 978-3-642-40904-2 / 9783642409042
Zustand Neuware
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