Nanowire Field Effect Transistors: Principles and Applications

Dae Mann Kim, Yoon-Ha Jeong (Herausgeber)

Buch | Hardcover
290 Seiten
2013
Springer-Verlag New York Inc.
978-1-4614-8123-2 (ISBN)

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Nanowire Field Effect Transistors: Principles and Applications -
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“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET).
During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET.
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET.
During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes.
Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Quantum Wire and Sub-Bands.- Carrier Concentration and Transport.- P-N Junction Diode: I-V Behavior and Applications.- Silicon Nanowire Field Effect Transistor.- Fabrication of Nanowires and their Applications.- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions.- Green Energy Devices.- Nanowire Field Effect Transistors in Optoelectronics.- Nanowire BioFETs: An Overview.- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology.- Nanowire FET Circuit Design – An Overview.

Erscheint lt. Verlag 23.10.2013
Zusatzinfo 98 Illustrations, color; 98 Illustrations, black and white; VI, 290 p. 196 illus., 98 illus. in color.
Verlagsort New York, NY
Sprache englisch
Maße 155 x 235 mm
Themenwelt Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
Schlagworte Electrostatics • ESD Design • MOS • MOSFET • nanoelectronics • Nanowires • NWFET • semiconductors • sensors
ISBN-10 1-4614-8123-6 / 1461481236
ISBN-13 978-1-4614-8123-2 / 9781461481232
Zustand Neuware
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