Fundamentals of Modern VLSI Devices

Yuan Taur is a Professor of Electrical and Computer Engineering at the University of California, San Diego. He spent twenty years at IBM's T. J. Watson Research Center where he won numerous invention and achievement awards. He is an IEEE Fellow, Editor-in-Chief of IEEE Electron Device Letters, and holds thirteen US patents. Tak H. Ning is an IBM Fellow at the T. J. Watson Research Center, New York, where he has worked for over 35 years. A Fellow of the IEEE and the American Physical Society and a member of the US National Academy of Engineering, he has authored more than 120 technical papers and holds 36 US patents. He has won several awards, including the ECS 2007 Gordon E. Moore Medal, the IEEE 1991 Jack A. Morton Award and the 1998 Pan Wen-Yuan Foundation Outstanding Research Award.

Physical constants and unit conversions; List of symbols; Preface to the second edition; Preface to the first edition; 1. Introduction; 2. Basic device physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performance factors; 6. Bipolar devices; 7. Bipolar device design; 8. Bipolar performance factors; 9. Memory devices; 10. Silicon-on-insulator devices; Appendices: 1. CMOS process flow; 2. Outline of a process for fabricating modern n-p-n bipolar transistors; 3. Einstein relations; 4. Spatial variation of quasi-Fermi potentials; 5. Generation and recombination processes and space-charge-region current; 6. Diffusion capacitance of a p-n diode; 7. Image-force-induced barrier lowering; 8. Electron-initiated and hole-initiated avalanche breakdown; 9. An analytical solution for the short-channel effect in subthreshold; 10. Generalized MOSFET scale length model; 11. Drain current model of a ballistic MOSFET; 12. Quantum-mechanical solution in weak inversion; 13. Power gain of a two-port network; 14. Unity-gain frequencies of a MOSFET transistor; 15. Determination of emitter and base series resistances; 16. Intrinsic-base resistance; 17. Energy-band diagram of a Si-SiGe n-p diode; 18. fr and fmax of a bipolar transistor; References; Index.