Amorphous and Crystalline Silicon Carbide II
Springer Berlin (Verlag)
978-3-642-75050-2 (ISBN)
I Growth of Crystalline Silicon Carbide.- Crystalline SiC on Si and High Temperature Operational Devices (With 7 Figures).- Heteroepitaxial Growth of Cubic SiC on a Si Substrate Using the Si2H6-C2H2-H2 System (With 6 Figures).- Chemical Vapor Deposition of Single Crystal ?-SiC (With 4 Figures).- ?-Silicon Carbide Prepared by Rapid Thermal Chemical Vapor Deposition (With 4 Figures).- Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue LEDs (With 17 Figures).- Polytype Change of Silicon Carbide at High Temperatures (With 3 Figures).- Epitaxial Growth of (SiC)xGe1-x on Silicon Substrates (With 1 Figure).- One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD of SiC in a Vertical Reactor.- II Growth of Amorphous, Microcrystalline, and Polycrystalline Silicon Carbide.- Properties of a-SiC:H Films Prepared with a Field-Enhanced RF Glow-Discharge System (With 4 Figures).- Preparation of Microcrystalline Silicon Carbide Thin Films for the Emitter of Si HBTs (With 4 Figures).- High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method (With 10 Figures).- Electron-Cyclotron-Resonance Plasma Deposition of Carbon onto Silicon (With 8 Figures).- Preparation and Characterization of Amorphous SiC Film by a Liquid Route (With 2 Figures).- III Characterization of Silicon Carbide.- Gap States of Highly Photosensitive a-SiC:H (With 5 Figures).- X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films (With 4 Figures).- Doping-Induced Structural Change in Amorphous Silicon (Carbon) Hydrogen Alloy (With 6 Figures).- Small Angle X-Ray Scattering from Microvoids in the a-SiC:H Alloy (With 3 Figures).- Studies on Carrier Lifetime and Deep Levels in CVD-Grown 3C-SiC by Photoconductivity and MicrowaveAbsorption (With 8 Figures).- ESR Study of Defects in Epitaxially Grown 3C-SiC (With 4 Figures).- Time-Resolved Photoluminescence Studies of Undoped and Al-Doped Cubic SiC (With 3 Figures).- Photoluminescence Imaging of Spatial Distribution of Recombination Centers in Cubic SiC (With 3 Figures).- Stress-Induced Defects vs Growth Faults in CVD-Grown SiC.- Crystalline Defects in ?-SiC as Revealed by a NaOH-KOH Eutectic Etch (With 6 Figures).- Ellipsometric Study of Cubic SiC.- Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si.- Vibrational and Electrical Properties of n and p Doped a-SiC:H Films.- IV Growth and Applications of Diamond Thin Films.- Current Status of Diamond Thin Films.- New Material and Device Design Considerations for High-Power Electronics.- Active and Passive Electronic Applications of CVD Diamond Films.- V Surfaces and Interfaces of Silicon Carbide.- Surface and Interface Studies of SiC (Buffer-Layer)/Si(100) (With 6 Figures).- The Influence of Hydrogen on the Transition from Amorphous to Crystalline Structure in Plasma Deposition of Silicon and Alloys.- Microstructure of the a-Si1-xCx:H/c-Si Interface (With 2 Figures).- Atomic Layer Control in Cubic SiC Growth Utilizing Surface Superstructure in Gas Source MBE (With 7 Figures).- On the Stability of a Cr + C Phase on (100) 3C SiC at Elevated Temperatures.- VI Processing and Device Applications of Silicon Carbide.- Physics and Applications of Amorphous Silicon Carbide (With 6 Figures).- ?-SiC on Titanium Carbide for Solid State Devices (With 12 Figures).- Fabrication of MOSFETs on ?-SiC Single Crystalline Layers Grown on Si(100) Substrates (With 6 Figures).- A High Transconductance ?-SiC Buried-Gate Junction Field Effect Transistor (With 5 Figures).- SiC as aPotential FET Gate Insulator (With 8 Figures).- Applications of High Purity SiC Prepared by Chemical Vapor Deposition (With 12 Figures).- SiC/Si HBT Using Polycrystalline SiC Layers Prepared by Electron Beam Evaporation (With 5 Figures).- Thin Film Transistors Using Polycrystalline SiC (With 8 Figures).- Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films (With 6 Figures).- W/SiC Contact Resistance at Elevated Temperatures (With 2 Figures).- Application of Excimer Laser Processing in SiC Device Fabrication.- Index of Contributors.
Erscheint lt. Verlag | 23.11.2011 |
---|---|
Reihe/Serie | Springer Proceedings in Physics |
Zusatzinfo | X, 232 p. |
Verlagsort | Berlin |
Sprache | englisch |
Maße | 170 x 242 mm |
Gewicht | 430 g |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
Technik ► Elektrotechnik / Energietechnik | |
Technik ► Maschinenbau | |
Schlagworte | Amorphous and Crystalline Sillicon Carbide • Crystal • Diamond Thin Films • electron • electron microscopy • electron spectroscopy • fluid mechanics • High Operating-Temperature Devices • Hydrogen • Kinetics • Laser • Microscopy • photoelectron spectroscopy • scattering • spectroscopy • Thin Films • Transmission Electron Microscopy • X-Ray |
ISBN-10 | 3-642-75050-8 / 3642750508 |
ISBN-13 | 978-3-642-75050-2 / 9783642750502 |
Zustand | Neuware |
Haben Sie eine Frage zum Produkt? |
aus dem Bereich