Technology of Gallium Nitride Crystal Growth

Dr. Dirk Ehrentraut received a Diploma in Crystallography from the Humboldt University of Berlin, Germany and a Ph.D. in Sciences from the Institute of Applied Optics at the Swiss Federal Institute of Technology in Lausanne (EPFL), Switzerland. He joined the Tohoku University end of 2003 and is currently a visiting professor of the Institute of Multidisciplinary Research of Advanced Materials. His field of competence covers the crystal growth of films and bulk material from the liquid and vapor phase and material aspects of the wide band gap semiconductors of group-III nitrides and ZnO. He has authored 130 publications in books, journals and conferences and holds 6 patents.

Preface.- Development of the Gallium Nitride Market.- HVPE of GaN.- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds.- HVPE at Hitachi Cable.- HVPE Technology.- High-Growth Rate MOCVD.- Ammonothermal Solution Growth.- High-Pressure Solution (HPS) Growth of Gallium Nitride.- Na Flux LPE.- Ga Flux LPE.- Optical Properties of GaN Substrates.- Structural Properties of GaN.