Parameter modeling of submicron mosfet
Inner fringing field effect
Seiten
2011
LAP Lambert Acad. Publ. (Verlag)
978-3-8465-2200-4 (ISBN)
LAP Lambert Acad. Publ. (Verlag)
978-3-8465-2200-4 (ISBN)
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This text book is intended to take readers having only a minimal background and knowledge in device to the point at which they can model any short channel MOSFET.The readers will understand the utility of modeling any characteristic parameter of mosfet.The goal is to provide the most up-to-date information in the field. The text is reinforced with physical and intuitive explanations and necessary mathematical quantitative analysis.The book is meant for both undergraduate and post graduate students wanting to do research work in the device field.
Sprache | englisch |
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Maße | 150 x 220 mm |
Gewicht | 112 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
ISBN-10 | 3-8465-2200-7 / 3846522007 |
ISBN-13 | 978-3-8465-2200-4 / 9783846522004 |
Zustand | Neuware |
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