GaN and ZnO-based Materials and Devices
Seiten
2012
|
2012
Springer Berlin (Verlag)
978-3-642-23520-7 (ISBN)
Springer Berlin (Verlag)
978-3-642-23520-7 (ISBN)
The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Steve Pearton is one of the leaders in the field of GaN research and a co-author of another related successful Springer book.
UV LEDs.- Non-Polar GaN Growth.- High-Quality AlGaN Alloys.- Bulk AlN for UV LEDs.- Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes.- GaN-Based Sensors.- III-N Alloys for Solar Power Conversion.- GaN HEMT Technology.- GaN Power Devices.- Nitride Nanostructures.- Radiation-Induced Defects in GaN.- Electron Injection Effects in GaN.- Progress and Prospect of Rare-Earth Nitrides.- Advances in PLD of ZnO and Related Compounds.- ZnO Nanowires and p-Type Doping.- Multifunctional ZnO Structures.- ZnO/MgZnO Quantum Wells.- GZO TFTs.
Erscheint lt. Verlag | 14.1.2012 |
---|---|
Reihe/Serie | Springer Series in Materials Science |
Zusatzinfo | XVIII, 486 p. |
Verlagsort | Berlin |
Sprache | englisch |
Maße | 155 x 235 mm |
Gewicht | 875 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
Schlagworte | Gallium • Gallium nitride • Laser diodes • Light-Emitting Diodes • Nanowires • Solar cells • Zink |
ISBN-10 | 3-642-23520-4 / 3642235204 |
ISBN-13 | 978-3-642-23520-7 / 9783642235207 |
Zustand | Neuware |
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