GaN and ZnO-based Materials and Devices

Stephen Pearton (Herausgeber)

Buch | Hardcover
XVIII, 486 Seiten
2012 | 2012
Springer Berlin (Verlag)
978-3-642-23520-7 (ISBN)
171,19 inkl. MwSt
The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Steve Pearton is one of the leaders in the field of GaN research and a co-author of another related successful Springer book.

UV LEDs.- Non-Polar GaN Growth.- High-Quality AlGaN Alloys.- Bulk AlN for UV LEDs.- Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes.- GaN-Based Sensors.- III-N Alloys for Solar Power Conversion.- GaN HEMT Technology.- GaN Power Devices.- Nitride Nanostructures.- Radiation-Induced Defects in GaN.- Electron Injection Effects in GaN.- Progress and Prospect of Rare-Earth Nitrides.- Advances in PLD of ZnO and Related Compounds.- ZnO Nanowires and p-Type Doping.- Multifunctional ZnO Structures.- ZnO/MgZnO Quantum Wells.- GZO TFTs.

Erscheint lt. Verlag 14.1.2012
Reihe/Serie Springer Series in Materials Science
Zusatzinfo XVIII, 486 p.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 875 g
Themenwelt Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
Schlagworte Gallium • Gallium nitride • Laser diodes • Light-Emitting Diodes • Nanowires • Solar cells • Zink
ISBN-10 3-642-23520-4 / 3642235204
ISBN-13 978-3-642-23520-7 / 9783642235207
Zustand Neuware
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