Graphene & Carbon Nanotube Field Effect Transistors
2012
Nova Science Publishers Inc (Verlag)
978-1-61324-276-6 (ISBN)
Nova Science Publishers Inc (Verlag)
978-1-61324-276-6 (ISBN)
Describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices.
This book describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices. It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non-computer-intensive descriptions that allow the designer to compare their behaviour with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach.
This book describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices. It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non-computer-intensive descriptions that allow the designer to compare their behaviour with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach.
Preface; Classical Gradual-Channel Modeling of Graphene Field-Effect Transistors (FETs); Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors (CNTFETs); Effects of Differing Carbon Nanotube Field-Effect Transistor Architectures; Solution Deposition Methods for Carbon Nanotube Field-Effect Transistors; Index.
Zusatzinfo | Illustrations, unspecified |
---|---|
Verlagsort | New York |
Sprache | englisch |
Maße | 230 x 155 mm |
Gewicht | 342 g |
Themenwelt | Technik ► Elektrotechnik / Energietechnik |
Technik ► Maschinenbau | |
ISBN-10 | 1-61324-276-X / 161324276X |
ISBN-13 | 978-1-61324-276-6 / 9781613242766 |
Zustand | Neuware |
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