New Developments in Semiconductor Physics -

New Developments in Semiconductor Physics

Proceedings of the International Summer School Held in Szeged, Hungary, July 1 – 6, 1979

F. Beleznay, G. Ferenczi, J. Giber (Herausgeber)

Buch | Softcover
V, 283 Seiten
1980 | 1980
Springer Berlin (Verlag)
978-3-540-09988-8 (ISBN)
53,49 inkl. MwSt

Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectroscopy.- Luminescence of chromium in gallium arsenide.- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K.- Properties of an extended defect in GaAs.62P.38.- Large defect-lattice relaxation phenomena in solids.- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In).- Electron-phonon interaction: Polaron transport.- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb.- Photoluminescence in amorphous semiconductors.- Man-made semiconductor superlattices.- The localized states of interfaces and their physical models.- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids.- Is there a minimum linewidth in integrated circuits?.

Erscheint lt. Verlag 1.5.1980
Reihe/Serie Lecture Notes in Physics
Zusatzinfo V, 283 p. 5 illus.
Verlagsort Berlin
Sprache englisch
Maße 170 x 244 mm
Gewicht 507 g
Themenwelt Naturwissenschaften Physik / Astronomie Elektrodynamik
Technik Elektrotechnik / Energietechnik
Schlagworte Circuit • Hall Effect • Integrated circuit • Physics • semiconductor
ISBN-10 3-540-09988-3 / 3540099883
ISBN-13 978-3-540-09988-8 / 9783540099888
Zustand Neuware
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