Analytical and Numerical Studies of Defect Formation in SiC

Improvement of PVT (Physical Vapor Transport) grown
SiC (Silicon Carbide) structural quality is crucial
for the wide commercialization of SiC electronic
devices that feature superior characteristics for
power conditioning and control. This is why, this
publication is devoted to investigation and
development of comprehensive models that can help to
explain, understand and, then, eliminate
formation of various defects in SiC during PVT
growth.