Semiconductor Materials and Devices

Part 1 Material for Optoelectronics: Quantum Confinement in Porous Silicon, V.K. Jain et al; Conduction Model for Polycrystalline Silicon Films, S.S. Negi and O.P. Joshi; Photo-CVD Silicon Nitride Thin Films - Preparation, Properties and Applications, O.P. Agnihotri and V.K. Rathi; Some Novel Structures by Molecular Beam Epitaxy, G.P. Kothiyal; Nonlinearities in Strained (III)B InxGa1-xAS/A10.2-Ga0.8 as Multiple Quantum Wells, V. Das et al; Fluorine Induced Group V Inter-Diffusion in III-V Quantum Wells, V. Das; Quality Assessment of GaAs/Si Materials Grown with Atomic Layer Epitaxial Predisposition Layers, S. Dhar et al; Effect of Impurity Position on the Binding Energy or Donor in a Quantum Well, V. Anitha et al. Part 2 Semiconductor Processing and Characterization: Anisotropic Wet Chemical Etching of Monocrystalline Silicon, S. Ahmad; A Quasi Two-Dimensional Model for the Analysis and Simulation of Capacitance - Voltage Profiles Observed Experimentally in a Si-Si, Ge-Si Quantum Well, D. Biswas et al; Electrically Active Defects Due to End-of-Ion-Range in Silicon Irradiated with MeV Ar+ Ion, P.K. Giri et al; Study Hydrogen Diffusion in Silicon by Elastic Recoil Detection Analysis, T. Som et al; Time Analyze Transient Spectroscopy Analysis of Photo-Induced Current Transient in Undoped Semi-Insulating Gallium Arsenide, P.K. Giri and Y.N. Mohapatra; New Donor Formation in Cz-Si Heat Treated at 650'C, O. Prakash and S. Singh; Factors Determining Resolution and Repeatability in SRP Measurements, P. Datta et al. Part 3 IR Devices and Systems: Recent Advances in Semiconductor Based Optoelectronic Devices and Systems, O.P. Nijhawan; Focal Plane Array (FPA) For Infrared Imaging Application, A.V.R. Warrier et al; Characterization of Surface and Bulk Effect by Variable Area Diode Test Strucures in Hg Cd Te Technology, V. Gopal; Computer Studies on Nearly 2mm Germanium p-n Junction IMPATT Source for Possible IR Detection, S.P. Pati et al. Part 4 Other Devices: General Expression for Optimum Load, Maximum Power and Fill Factor of Solar Cell Using a Double Exponential Model, A. Kapoor et al; Interface State Energy Distribution from Non-Ideal (I-V) Characteristics of Ni/n-Si Schottky Barrier Diode, P.P. Sahay; A Process and Device Simulation Model for the Fabrication GaAs MESFET, M.B. Dutt et al; Effects of Pearson IV - Distribution on Intrinsic Gate - Drain Capacitance for an Ion Implanted Si MESFET, S. Rajesh and R.S. Gupta; Channelling and Channelling Radiation in Semiconductor Superlattices, A.P. Pathak et al.