Spin and Optoelectronic Properties of Single Vacancies Embedded in Atomically Thin Semiconductor Devices

Two-dimensional materials exhibit outstanding electronic and optical properties that can be tuned by various parameters, such as magnetic and electric fields, impurities, defects, and the dielectric environment. A He-ion beam focused on atomically thin 2D materials creates point-defects that can be utilized in future quantum networks. In this work, we characterize the sulfur vacancy in monolayer MoS2 with the help of magneto- and optoelectronic-spectroscopy methods.