Silicon-Based High-Sensitivity Broadband Receiver

Dr. Xiaojun Bi is a full professor at School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China. He received the B.S. and M.S. degrees from Huazhong University of Science and Technology (HUST), Wuhan, China, in 2005 and 2007, respectively, and Ph.D. degree from the National University of Singapore (NUS), Singapore in 2013.  From 2007 to 2008, he worked as a research associate in the Institute of Micro-electronics, Chinese Academy of Sciences (IMECAS), Beijing, China. From 2009 to 2013, he was a research scholar with NUS and Institute of Micro-electronics (IME), Agency for Science, Technology and Research (A*STAR) engaged in silicon-based millimeter-wave ICs for THz imaging and Gb/s wireless communication. From 2013 to 2015, he was a research scientist with IME, A*STAR and worked on high-speed IC design. In Dec. 2014, he joined the School of Optical and Electronic Information/School of Integrated Circuits, HuazhongUniversity of Science and Technology, Wuhan, China, where he has been a full professor since Nov. 2020.  His current research interests include IC design for high-speed communications and mmWave/THz imaging. More specifically, Dr. BI and his team have developed silicon-based wideband driver amplifier, transimpedance amplifier and multiplexer for 4×25 GB/56 GB/100 GB+ wireline communications, silicon-based W-band and V-band high-sensitivity receivers and hybrid modules for imaging and remote sensing including the world’s first single-pole double-throw distributed amplifier that achieves the lowest switching loss on silicon at W-band, silicon-based Q-band power amplifier and transmitter for high-speed wireless communications.  Dr. Bi served as an associate editor for IEEE Access (2019-2022). He is a technical reviewer for Journal of Solid-State Circuits, IEEE Transactions on Circuits and Systems I, IEEE Transactions on Microwave Theory and Techniques, etc. 

Chapter 1 Background of High-Sensitivity Receiver.- Chapter 2 Silicon Device Limitations.- Chapter 3 High-Sensitivity Radiometer Architecture.- Chapter 4 High Sensitivity W-band Radiometer.- Chapter 5 Interstage Reflectionless Radiometer.- Chapter 6 A Dual-band Radiometer Utilizing a Distributed Active Hot- and Cold- load.- Chapter 7 High Sensitivity Optical Receiver Architecture.- Chapter 8 Ultra-Large Dynamic Range CMOS Transimpedance Amplifier.- Chapter 9 High Sensitivity and Dynamic-Range 25 GBaud Silicon Receiver.- Chapter 10 Summary and Conclusions