Quantum Effect Physics, Electronics and Applications, Proceedings of the INT Workshop, Luxor, Egypt, 5-9 January 1992

Papers include: Silicon ULSI: future and limitations from a materials viewpoint (S Asai, Advanced Research Laboratory, Hitachi Ltd, Japan); Neural networks and learning (Y S Abu-Mostafa, California Institute of Technology, Pasadena); Thoughts on the impact of biology on the design of electronic devices and systems (C D W Wilkinson, University of Glasgow, UK); Kinetic conductance and the characteristic carrier traversal times of small conductors (M B^D" uettiker, IBM T J Watson Research Center and H Thomas, University of Basel, Switzerland); Nanofabrication: challenges and opportunities (D P Kern, IBM Research T J Watson Research Center); Ballistic transport and low-frequency noise in high mobility two-dimensional electron systems (S Tarucha et al, NTT Basic Research Laboratories, Tokyo, Japan); Optical properties: Spectroscopy of quantum-dot atoms and antidot arrays (D Heitmann et al, Max Planck Institut fur Festkorperforschung, Germany); Resonant Tunnelling and Coulomb Blockade: Momentum conservation in 1D-2D tunnelling processes (J Smoliner et al, Walter Schottky Institut and Technical University of Munich, Germany); Applications: Circuit-level applications of quantum effect device [RHET] (A Shibatomi and N Yokoyama, Fujitsu Ltd, Japan).