Ferroelectric Thin Films -

Ferroelectric Thin Films

Basic Properties and Device Physics for Memory Applications
Buch | Hardcover
XIII, 244 Seiten
2005 | 2005
Springer Berlin (Verlag)
978-3-540-24163-8 (ISBN)
213,99 inkl. MwSt

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films.- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films.- PB-Based Ferroelectric Thin Films Prepared by MOCVD.- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films.- Rhombohedral PZT Thin Films Prepared by Sputtering.- Scanning Nonlinear Dielectric Microscope.- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary.- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions.- Relaxor Behaviors in Perovskite-Type Dielectric Compounds.- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique.- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics.- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film.- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure.

Erscheint lt. Verlag 22.2.2005
Reihe/Serie Topics in Applied Physics
Zusatzinfo XIII, 244 p.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 485 g
Themenwelt Naturwissenschaften Physik / Astronomie Atom- / Kern- / Molekularphysik
Naturwissenschaften Physik / Astronomie Elektrodynamik
Schlagworte Crystal • dielectric properties • Ferroelectrics • Helium-Atom-Streuung • Magnetband • Material properties • Memory devices • Metal • Physics • Polarization hysteresis • semiconductor • Sensor • Thin film
ISBN-10 3-540-24163-9 / 3540241639
ISBN-13 978-3-540-24163-8 / 9783540241638
Zustand Neuware
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