Colloidal Quantum Dot Light Emitting Diodes (eBook)

Materials and Devices

(Autor)

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2023 | 1. Auflage
400 Seiten
Wiley-VCH (Verlag)
978-3-527-84513-2 (ISBN)

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Colloidal Quantum Dot Light Emitting Diodes -  Hong Meng
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Colloidal Quantum Dot Light Emitting Diodes

Explore all the core components for the commercialization of quantum dot light emitting diodes

Quantum dot light emitting diodes (QDLEDs) are a technology with the potential to revolutionize solid-state lighting and displays. Due to the many applications of semiconductor nanocrystals, of which QDLEDs are an example, they also hold the potential to be adapted into other emerging semiconducting technologies. As a result, it is critical that the next generation of engineers and materials scientists understand these diodes and their latest developments.

Colloidal Quantum Dot Light Emitting Diodes: Materials and Devices offers a comprehensive introduction to this subject and its most recent research advancements. Beginning with a summary of the theoretical foundations and the basic methods for chemically synthesizing colloidal semiconductor quantum dots, it identifies existing and future applications for these groundbreaking technologies. The result is tailored to produce a thorough understanding of this area of research.

Colloidal Quantum Dot Light Emitting Diodes readers will also find:

  • An author with decades of experience in the field of organic electronics
  • Detailed discussion of topics including advanced display technologies, the patent portfolio and commercial considerations, and more
  • Strategies and design techniques for improving device performance

Colloidal Quantum Dot Light Emitting Diodes is ideal for material scientists, electronics engineers, inorganic and solid-state chemists, solid-state and semiconductor physicists, photochemists, and surface chemists, as well as the libraries that support these professionals.

Hong Meng, PhD, is a Professor in the School of Advanced Materials at the Peking University Shenzhen Graduate School, China. After receiving his PhD from University of California, Los Angeles (UCLA) in 2002, he has spent the last twenty years of his career working at the Institute of Materials Science and Engineering (IMRE) in Singapore, Lucent Technologies Bell Labs, and DuPont Experimental Station.

Prof. Hong Meng received his Ph.D. from University of California Los Angeles (UCLA) in 2002. He has been working in the field of organic electronics for more than 20 years. His career experiences including working at the Institute of Materials Science and Engineering (IMRE) in Singapore, Lucent Technologies Bell Labs, DuPont Experimental Station. In 2014, he moved to School of Advanced Materials Peking University Shenzhen Graduate School, China. He has contributed over 120 peer-reviewed papers (citation: 6000) in chemistry and materials science fields, filed over 46 US patents, 50 Chinese patents.

HISTORY AND INTRODUCTION OF QDS AND QDLEDS
1.1 Preparation Route of Quantum Dots
1.2 Light-Emitting Characteristics of Quantum Dots
1.3 Application of Quantum Dots on Display Devices
1.4 Conclusion and Remarks
References
Chapter 2 COLLOIDAL SEMICONDUCTOR QUANTUM DOT LED STRUCTURE AND PRINCIPLES
2.1 Basic Concepts
2.2 Colloidal Quantum Dot Light-Emitting Devices
References
SYNTHESIS AND CHARACTERIZATION OF COLLOIDAL SEMICONDUCTOR QUANTUM DOT MATERIALS
3.1 Background
3.2 Synthesis and Post-Processing of Colloidal Quantum Dots
3.3 Material Characterization
3.4 Conclusion and Outlook
References
RED QUANTUM DOT LIGHT EMITTING DIODES
4.1 Background
4.2 Red Light Quantum Dot Materials
4.3 Red QDLED Devices
4.4 Conclusion and Outlook
References
GREEN QUANTUM DOT LED MATERIALS AND DEVICES
5.1 Background
5.2 Commonly Used Luminescent Layer Materials in Green QDLEDs
5.3 Development of Device Structures for Green QDLEDs
5.4 Factors Affecting the Performance of Green QDLEDs
5.5 Summary and Outlook
Reference
BLUE QUANTUM DOT LIGHT EMITTING DIODES
6.1 Introduction
6.2 Blue Quantum Dot Luminescent Materials
6.3 Optimization of Charge Transport Layer (CTLs)
6.4 Device Structure
6.5 Summary
Reference
Chapter 7 NEAR-INFRARED QUANTUM DOTS QDLED
7.1 Introduction of Near Infrared Quantum Dots
7.2 Near Infrared Quantum Dot Materials
7.3 Optimization of Near Infrared Quantum Dot Materials
7.4 Summary and prospect
References
WHITE QDLED
8.1 Generation of White Light
8.2 Quantum Dots for White LEDs
8.3 Summary Outlook
References
NON-CADMIUM QUANTUM DOT LIGHT-EMITTING MATERIALS AND DEVICES
9.1 Introduction
9.2 Quantum Dots and QDLED
9.3 Methods for Optimizing QDLED Performance
9.4 Summary and Outlook
References
AC-DRIVEN QUANTUM DOT LIGHT-EMITTING DIODES
10.1 Principle of Luminescence of DC and AC Driven QDLEDs
10.2 Mechanism of Double-Emission Tandem Structure of AC QDLEDs
10.3 Optimization Strategies for AC QDLEDs
10.4 Conclusion and Future Direction of AC-QDLED
References
STABILITY STUDY AND DECAY MECHANISM OF QUANTUM DOT LIGHT EMITTING DIODES
11.1 Quantum Dot Light-Emitting Diode Stability Research Status
11.2 Factors Affecting the Stability of Quantum Dot Light-Emitting Diodes
11.3 Quantum Dot Light-Emitting Diode Efficiency Decay Mechanism
11.4 Ageing Mechanisms of QDLEDs
11.5 Characterization Technologies for QDLEDs
11.6 Outlook
References
ELECTRON/HOLE INJECTION AND TRANSPORT MATERIALS IN QUANTUM DOT LIGHT EMITTING DIODES
12.1 Introduction
12.2 Charge-Transport Mechanisms
12.3 Electron Transport Materials (ETMs) for QDLED
12.4 Electron Injection Materials for QDLED
12.5 Hole Transport Materials for QDLED
12.6 Hole Injection Materials for QDLED
12.7 Summary and outlook
References
QUANTUM DOT INDUSTRIAL DEVELOPMENT AND PATENT LAYOUT
13.1 Introduction
13.2 Patent Layout
13.3 Summary and outlook
References
Patterning Techniques for Quantum Dot Light-Emitting Diodes (QDLED)
14.1 Introduction
14.2 Photolithography
14.3 Micro-Contact Transfer
14.4 Inkjet Printing
14.5 Other Patterning Techniques
14.6 Conclusion
Reference

1
History and Introduction of QDs and QDLEDs


Semiconductor nanocrystals (NCs) are the most widely studied of the nanoscale semiconductors. In early 1981, Alexei Ekimov and Alexander Efros, working at the S.I. Vavilov State Optical Institute and A.F. Ioffe Institute, Russia, discovered nanocrystalline, semiconducting quantum dots (QDs) in a glass matrix and conducted pioneering studies of their electronic and optical properties. Simultaneously, in 1985, Louis Brus at Bell Laboratories in Murray Hill, NJ, discovered colloidal semiconductor NCs (QDs), for which he shared the 2008 Kavli Prize in Nanotechnology. Over the years, QDs have been established as a new type of semiconductor nanocrystalline material whose size is smaller than or close to the excitonic Bohr radius of its bulk material. Common semiconductor materials include Si, Ge, compounds of group II–VI (e.g. CdSe), and compounds of group III–V (e.g. indium phosphide [InP]). When the size of these bulk semiconductor materials is larger than their exciton Bohr radii, electrons and holes are able to move freely and independently in the bulk materials. However, when the size of QDs is smaller than their own exciton Bohr radius, after being excited by light, an electron in the valence band will leap to the conduction band, leaving a hole in the valence band, and the electron and hole form an exciton due to Coulomb effect, which is confined in a space smaller than the exciton Bohr radius, and the electron and hole will be quantized, which is called the “quantum size effect” of nanomaterials. This quantum size effect allows QDs to have discrete energy levels, thus giving them unique physicochemical properties [1]. Colloidal semiconductor NCs have size‐dependent particle properties, while their surface ligands make them solution‐processable, which gives them a “particle‐solution” duality.

Figure 1.1a shows the energy level diagrams of molecular, QD, and bulk semiconductor materials. The molecular orbital energy level diagram is composed of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO), while the energy level diagram of QDs consists of some discrete energy levels, and the bulk semiconductor material consists of conduction and valence bands. Figure 1.1b illustrates the spatial extent of the confined domains of electrons and holes and the respective energy as a function of the density of electronic states for bulk semiconductor materials, two‐dimensional quantum sheets, one‐dimensional quantum wires, and zero‐dimensional QDs, depending on the size of the material. For a bulk semiconductor material, the dimensions in all three dimensions are larger than its own Bohr exciton radius, and electrons and holes are free to move independently in all three dimensions; while for a two‐dimensional quantum sheet, the dimensions in two dimensions are larger than its own Bohr exciton radius, and electrons and holes are free to move independently in two dimensions; and for a one‐dimensional quantum wire, the dimensions in one dimension are larger than its own Bohr exciton radius, while for a one‐dimensional quantum wire, the dimensions in one dimension are larger than its own Bohr exciton radius, and electrons and holes are free to move independently in two dimensions. For a one‐dimensional quantum wire, whose dimension in one dimension is larger than its own exciton radius, electrons and holes are free to move independently in one dimension; and for a zero‐dimensional QD, whose dimension in all three dimensions is smaller than its own exciton radius, electrons and holes are restricted from moving freely and independently in all dimensions. In general, QD is a collective term for a two‐dimensional quantum sheet, a one‐dimensional quantum wire, and a zero‐dimensional QD.

Figure 1.1 (a) Schematic diagram of energy levels of molecular, quantum dot, and bulk semiconductor materials; (b) spatial extent of the confined domain of electrons and holes and the respective energy as a function of the density of electronic states for bulk semiconductor materials, two‐dimensional quantum sheets, one‐dimensional quantum wires, and zero‐dimensional quantum dots depending on the material size.

Figure 1.2 Preparation pathways for quantum dots: the “top‐down” method and the “bottom‐up” method.

1.1 Preparation Route of Quantum Dots


There are two completely different ways to prepare QDs, namely the “top‐down method” and the “bottom‐up method”, as shown in Figure 1.2. The top‐down method is to prepare QDs by reducing the dimensionality and size of the bulk semiconductor material; the bottom‐up method is to combine atoms or molecules into QDs by chemical synthesis. The former approach is limited by the ultra‐fine processing technology, which cannot produce QDs below 10 nm at present, and the morphological regulation of QDs is also limited to some extent. The latter is mainly achieved through colloidal chemical synthesis, which can produce colloidal QDs of different sizes and shapes.

1.2 Light‐Emitting Characteristics of Quantum Dots


1.2.1 Particle Size and Emission Color


QDs are semiconductor particles having a few nanometers in size, their optical and electronic properties are quite different from those of larger particles as a result of quantum mechanics. When the QDs are illuminated by UV light, an electron in the QD can be excited from the transition of an electron valence band to the conductance band. The excited electron can drop back into the valence band releasing its energy as light. The color of that light depends on the energy difference between the conductance band and the valence band. The QD absorption and emission features correspond to transitions between discrete quantum mechanically allowed energy levels in the box, which are reminiscent of atomic spectra.

1.2.2 Quantum Dot Optical Property


The QDs are defined as the semiconductor NCs with the quantum confinement. Thus, the semiconductor nanoparticles with dimensions QDs have the following features:

1.2.2.1 Quantum Surface Effect

The surface effect refers to the fact that as the particle size of QDs decreases, most of the atoms are located on the surface of QDs, and the specific surface area of quantum dots increases with decreasing particle size. Due to the large specific surface area of QDs (nanoparticles), the increase in the number of atoms in the surface phase leads to the lack of coordination, unsaturated bonds, and suspension bonds of surface atoms. This makes these surface atoms highly reactive, extremely unstable, and easily bonded with other atoms. This surface effect will cause the large surface energy and high activity of nanoparticles. The activity of surface atoms not only causes changes in the surface atomic transport and structural type of nanoparticles but also causes changes in the surface electron spin conformation and electronic energy spectrum. This feature offers a route to manipulate QD interactions with their environment. QDs can be tethered to proteins, antibodies, or other biologic species and used as optically addressable bio‐labels. On the other hand, passivation of QD surface can improve the QD stability and increase the photoluminescent quantum efficiency. Surface defects lead to trapped electrons or holes, which in turn affect the luminescent properties of QDs and cause nonlinear optical effects. Metallic materials show various characteristic colors through light reflection. Due to the surface effect and size effect, the light reflection coefficient of nanoparticles decreases significantly, usually less than 1%, so nanoparticles are generally black in color, and the smaller the particle size, the darker the color, i.e. the stronger the light absorption ability of nanoparticles, showing a broadband strong absorption spectrum. Surface effect or ligand modification offers an additional tool for manipulating energy levels and electronic and optical properties.

1.2.2.2 Quantum Size Effect

Quantum size effect refers to the phenomenon that the electron energy levels near the Fermi energy level change from quasi‐continuous to discrete energy levels, that is, when the particle size drops to a certain value, the energy level splits or energy gap widens, in other words, the energy spectrum becomes discrete, and as a result, the bandgap becomes size‐dependent. When the change in energy level is greater than the change in thermal, optical, and electromagnetic energy, it leads to the magnetic, optical, acoustic, thermal, electrical and superconducting properties of nanoparticles being significantly different from those of conventional materials. This feature of QDs is that the energy gap changes with the increase in the grain size, the larger the grain size, the smaller the energy gap, and vice versa, the larger the energy gap. That is, the smaller the QD, the shorter the wavelength of light (blueshift), and the larger the QD, the longer the wavelength of light (redshift). According to the size effect of QDs, we can use the method of changing the size of the grain to regulate the tuning of the light spectrum of the material and no...

Erscheint lt. Verlag 11.10.2023
Sprache englisch
Themenwelt Naturwissenschaften Chemie
Schlagworte Anorganische Chemie • Chemie • Chemistry • Components & Devices • Electrical & Electronics Engineering • Electronic materials • Elektronische Materialien • Elektrotechnik u. Elektronik • Inorganic Chemistry • Komponenten u. Bauelemente • LED • Materials Science • Materialwissenschaften • Quantenpunkt
ISBN-10 3-527-84513-5 / 3527845135
ISBN-13 978-3-527-84513-2 / 9783527845132
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