Emerging Ferroelectric Materials and Devices

Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He received the PhD degree in Applied Physics at the University of Michigan in 2006. His teaching and research interests are in the areas of III-nitride semiconductors, LEDs, lasers, quantum photonics, solar fuels, and artificial photosynthesis. Prof. Mi has edited 2 books, 12 book chapters, 20 patents/patent applications, more than 200 journal papers, and over 300 conference papers/presentations on these topics. He was a faculty member at McGill University from 2007 to 2016, where he received several awards, including the Hydro-Québec Nano-Engineering Scholar Award in 2009, the William Dawson Scholar Award in 2011, the Christophe Pierre Award for Research Excellence in 2012, and the Engineering Innovation Award in 2105. Prof. Mi has received the Young Investigator Award from the 27th North American Molecular Beam Epitaxy (MBE) Conference in 2010 and the Young Scientist Award from the International Symposium on Compound Semiconductors in 2015. Prof. Mi serves as the Editor of Progress in Quantum Electronics. He also served as the Associate Editor of IEEE J. Lightwave Technol. as well as the Chair of many international conferences, including the General Chair of IEEE Photonics Conference in 2020, General Chair of IEEE Photonics Society Summer Topicals Meeting in 2016-2017, and Co-Chair of International Symposium on Semiconductor Light Emitting Devices in 2017. Prof. Mi is a fellow of SPIE and OSA.

1. ScAlN Epitaxy: Transistors Through High ScN Fraction Thin Films
Matthew Hardy
2. To be determined
Asif Khan
3. To be determined
John Heron
4. Polarity and Ferroelectricity in Wurtzite-Type Materials
Simon Fichtner
5. In-plane ferroelectric switching of non-polar wurtzite AlScN films using SAW resonators
Oliver Ambacher and Mohamed Yassine
6. 2D ferroelectrics and device applications
Cheng Gong
7. Toward New Ferroelectric Nitride Materials and Devices: Aluminum Boron Nitride and Aluminum Scandium Nitride Ferroelectric High Electron Mobility Transistors (Ferro HEMTs)
Joseph Casamento and Huili Grace Xing
8. Recent advances of epitaxial ferroelectric nitrides
Zetian Mi