Electromigration in Metals

Paul Ho is Professor Emeritus in the Department of Mechanical Engineering and the Texas Materials Institute at the University of Texas at Austin. He has received research awards from the Electrochemical Society, IEEE, IITC and Semiconductor Industry Association, among others. Chao-Kun Hu has recently retired as a Research Staff Member in the Reliability Department at the T.J. Watson Research Center of IBM. He received IBM Corporate awards, IEEE Cledo Brunetti award, EDS Recognition and IITC Best Paper awards, and Invention of the Year NY Intellectual Property Law Association. Martin Gall is the director of the U.S. Operations Reliability Engineering Department at GLOBALFOUNDRIES Inc. He is an IEEE TDMR editor and the recipient of an IEEE IITC Best Paper and SRC Mentor of the Year Award. Valeriy Sukharev is principal engineer for Calibre Design Solutions, Siemens EDA, Siemens Digital Industries Software. He was a recipient of the 2014 and 2018 Mahboob Khan Outstanding Industry Liaison Award (SRC) and the Best Paper awards from ICCAD 2016, 2019 and 2020.

1. Introduction to electromigration; 2. Fundamentals of electromigration; 3. Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects; 4. Stress evolution and damage formation in confined metal lines under electric stressing; 5. Electromigration in Cu interconnect structures; 6. Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects; Analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure; 8. Massive scale statistical studies for electromigration; 9. Assessment of electromigration damage in large on-chip power grids. Index.