AlN base layers for UV LEDs
Seiten
2021
Cuvillier Verlag
978-3-7369-7451-7 (ISBN)
Cuvillier Verlag
978-3-7369-7451-7 (ISBN)
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To enable the fabrication of high performance ultraviolet (UV) light-emitting diodes (LEDs) this work aims at improving the quality of AlN base layers on sapphire substrates. The main issues for UV LEDs are still a limited internal quantum efficiency due to a high amount of threading dislocations along with a limited light extraction efficiency due to total internal reflection at the AlN/sapphire interface. Therefore, high-temperature annealing of AlN/sapphire layers and growth on nanopatterned sapphire substrates were comprehensively investigated.
High-temperature annealing was applied to AlN layers of different strain and thickness grown by metalorganic vapour phase epitaxy (MOVPE). The threading dislocation density could be successfully reduced by more than one order of magnitude down to 6 × 108 cm-2.
Wave optical simulations of UV LEDs on nanopatterned sapphire substrates (NPSS) were conducted and showed a potential increase in light extraction efficiency compared to a planar substrate. The optimized MOVPE growth process on sapphire nanopillars and sapphire nanoholes resulted in a fully coalesced and atomically smooth AlN surface. The threading dislocation density was reduced to 1 ×109 cm-2 for AlN on both nanopillars and nanoholes.
UVC LEDs emitting at 265 nm wavelength were grown on top of the developed templates. Increased internal efficiency was obtained by reduced dislocation density and more efficient light extraction was achieved on NPSS in case of a transparent heterostructure and reflective contacts. Thus, the developed templates yield considerable improvement in light output compared to conventional templates.
High-temperature annealing was applied to AlN layers of different strain and thickness grown by metalorganic vapour phase epitaxy (MOVPE). The threading dislocation density could be successfully reduced by more than one order of magnitude down to 6 × 108 cm-2.
Wave optical simulations of UV LEDs on nanopatterned sapphire substrates (NPSS) were conducted and showed a potential increase in light extraction efficiency compared to a planar substrate. The optimized MOVPE growth process on sapphire nanopillars and sapphire nanoholes resulted in a fully coalesced and atomically smooth AlN surface. The threading dislocation density was reduced to 1 ×109 cm-2 for AlN on both nanopillars and nanoholes.
UVC LEDs emitting at 265 nm wavelength were grown on top of the developed templates. Increased internal efficiency was obtained by reduced dislocation density and more efficient light extraction was achieved on NPSS in case of a transparent heterostructure and reflective contacts. Thus, the developed templates yield considerable improvement in light output compared to conventional templates.
Erscheinungsdatum | 30.06.2021 |
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Reihe/Serie | Innovationen mit Mikrowellen und Licht ; 66 |
Verlagsort | Göttingen |
Sprache | englisch |
Maße | 148 x 210 mm |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik |
Schlagworte | AlGaN • ALN • AlN base layers • AlN-Basisschichten • alon • Aluminiumnitrid • aluminumnitride • Atomic force microscopy • base layers • Basisschichten • crystal growth • crystallography • defect-selective etching • defektselektives Ätzen • Dehnung • Desinfektion • Disinfection • dislocation analysis • Displacement Talbot Lithography • electroluminescence • Electron Channeling Contrast Imaging • Elektrolumineszenz • Emissionsleistung • Epitaxy • Face-to-Face-Konfiguration • Fadenversetzung • Heteroepitaxie • heteroepitaxy • Heterostructure • Heterostruktur • high-temperature annealing • Hochtemperaturerhitzen • Internal Quantum Efficiency • interne Quanteneffizien • Kristallographie • Kristallwachstum • LEDs • Lichtausbeute • lichtemittierende Dioden • Lichtextraktionseffizienz • Lichtextraktionssimulationen • Light-Emitting Diodes • light extraction • Light Extraction Efficiency • light extraction simulations • metallorganische Gasphase • MOVPE • nanoholes • Nano-imprint lithography • nanopatterned sapphire substrates • Nanopillars • Nanopräge Lithographie • Oberflächenmorphologie • optoelectronic devices • optoelectronics • Optoelektronik • optoelektronische Bauteile • patterned substrates • Qualitätssteigerung • Rasterkraftmikroskopie • sapphire • Strain • strukturierte Substrate • Surface morphology • Template • Tensile strain • threading dislocation density • Transmission Electron Microscopy • Transmissionselektronenmikroskopie • UV LEDs • UV transparency • UV-Transparenz • Versetzungsanalyse • Versetzungsdichte • Verzerrung • wave optical simulations • wellenoptische Simulationen • Zugspannung |
ISBN-10 | 3-7369-7451-5 / 3736974515 |
ISBN-13 | 978-3-7369-7451-7 / 9783736974517 |
Zustand | Neuware |
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Buch | Softcover (2023)
De Gruyter Oldenbourg (Verlag)
39,95 €