Materials For Photonic Devices

Recent advances of GaAs-GalnP multiquantum wells grown by MOCVD on GaAs, InP and silicon substates, F. Omnes and M. Razeghi; growth of QW structures for photonics at 1.55 mu m, F. Genova et al; new preparation techniques of InP substrates for opto-electronic applications, R. Fornari and L. Zanotti; synchrotron radiation facilities and new materials characterization, M. Altarelli; characterization of surfaces and interfaces of III-V epitaxial structures by electron spectroscopies, J. Olivier; inverse photoemission on III-V semiconductors, P. Perfetti and B. Reihl; exciton quantization and optical properties in confined systems - the 2D-3D transition, A. D'Andrea et al; exciton recombination in GaAs/AlGaAs quantum well structures after resonant and nonresonant excitation, A. Vinattieri et al; electromagnetic field confinement effects in the optical microscopic cavity, F. De Martini and P. Mataloni; molecular engineering for quadratic nonlinear optics, J. Zyss; deposition and characterization of multilayer films for nonlinear optics, M.C. Petty and J.P. Cresswell; nonlinear optical properties of polymeric thin films - guest-host systems and conjugated polymers, F. Kajzar; impact of quantum confinement of optical nonlinearities, C. Flytzanis; glasses for integrated optical devices, G.C. Righini.