Si Detectors and Characterization for HEP and Photon Science Experiment

lt;p>Ajay Srivastava received his Ph.D. degree in Experimental High Energy Physics "Development of Si strip detector for the ECAL of the CMS Experiment at CERN, Geneva" at the Department of Physics, University of Delhi and Helsinki Institute of Physics, University of Helsinki, Finland. Thereafter, he worked as a Postdoctoral fellow at the Institute for Experimental Physics, University of Hamburg on two prestigious projects in Germany DESY with Professor Dr. Robert Klanner at DESY; "short strip p+n detector for inner tracking of CMS tracker upgrade"  and " x-ray p+n pixel detector for the European XFEL". He was a visiting scientist at CERN, Geneva from (2008-2010). He then did a second postdoctoral work "development of DSSD for Belle2" at the Tata Institute of Fundamental Research (TIFR), Mumbai with Prof. Tariq Aziz. In 2012, he worked as a Senior Scientist at FEI Company (now Thermo Fisher Scientific Instruments), USA. 

Ajay is currently a full Professor (Physics) at Chandigarh University involved in the research & development of p+n strip detectors for the phase-2 upgrade of the CMS tracker upgrade for the HL-LHC (2026) and x ray p+n pixel detector for the next generation photon science experiments. He has received several awards, fellowships and honors, such as a CIMO Fellow, UGC, New Delhi, DST (RA, Scientist), Govt. India, Industrial Resident, IMEC, Belgium, DAE RA-3 Honorarium, TIFR, Mumbai, just to mention a few. 

Development OF Si DETECTORS FOR THE CMS LHC Experiments.- Physics and Technology of Si  Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC.-  Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL.- T-CAD Simulation for the designing of detectors.- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL.- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments.- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS.- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL.- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation.- Appendices.