International Conference on Ion Implantation Technology

Part 1 Section i - advanced implanters and process control - invited papers - ion implantation from the past and into the future, S. Moffatt; negative-ion implantation technique, J. Ishikawa et al; charge neutralization in ion implanters, D.L. Smatlak et al; section ii - profiles and modelling - invited papers - on the determination of two-dimensional carrier distributions, W. Vandervorst et al; improved delineation technique for two dimensional dopant profiling, L. Gong et al; section iii - materials science - silicon - invited papers - implantation and transient boron diffusion - the role of the silicon self-interstital, P.A. Stolk et al; studies of point defect/dislocation loop interaction processes in silicon, K.S. Jones et al; on the relation between dopant anomalous diffusion in si and end-of-range defects, A. Claverie et al; section iv - materials science - compounds and alloys - invited papers - ion-beam induced relaxation of strained GexSi1-x layers, P. Kringhoj et al; thermodynamic behaviour of GeO2 formed by oxygen implantation into relaxed Si0.5 alloy, J.P. Zhang et al; section v - materials science - silicides - invited paper - ion beam synthesis of yttrium silicides in (111)Si, S. Jin et al; section vi - materials science -optoelectronics - invited paper - ion implantation for optical applications, Buchal; section vii - new applications in processing and devices - invited paper - application of advanced ion implantation techniques to flash memories, P. Cappelletti et al. Part 2 Section i - advanced implanter systems; section ii - subsystems and components; section iii - process control; section iv - ion-solid interactions; section v - materials science - silicon; section vi - materials science - alloys and compounds; section vii - materials science - silicides; section viii - new applications in processing and devices.