Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors (eBook)

Dr. Mengqi Fu received her Ph.D. degree from the School of Electronics Engineering and Computer Science, Peking University, China in 2016. Currently, she is a researcher at Shanghai Academy of Spaceflight Technology where she focuses on the device physics of InAs nanowires as well as the experimental exploration of novel device structures for high-performance nanoelectronic devices. Dr. Fu’s dissertation was awarded “Excellent Doctoral Dissertation of Peking University” in 2016. She also won the Outstanding Graduates of Beijing at Peking University award. During her Ph.D. studies, Dr. Fu published 15 peer-reviewed articles in international journals, including Nano Lett., Appl. Phys. Lett. and Nanotechnology, 3 of which as first author.

Supervisor’s Foreword 6
Abstract 8
Parts of this thesis have been published in the following journal articles: 10
Acknowledgements 11
Contents 12
1 Introduction 15
1.1 Advantages of InAs Nanowire-Based Electronic Devices 16
1.1.1 Advantages of InAs Material for Fabricating High-Performance Electronic Devices 16
1.1.2 Advantages of InAs Nanowires in Making Multi-gate and Gate-All-Around Devices 18
1.2 Crystal Structure of InAs Nanowires 21
1.3 Development Status of InAs Nanowire Electronic Devices 25
1.3.1 InAs Nanowire MOSFETs 26
1.3.2 InAs Nanowire TFETs 27
1.4 Several Problems of InAs Nanowire-Based Electronic Devices 30
1.4.1 High OFF-State Current of Devices 31
1.4.2 Interface State Between InAs Nanowires and Gate Dielectric 33
1.4.3 Relation Between Structure of InAs Nanowires and Their Device Performance 34
1.4.4 Dispersion of Device Performance 37
1.5 Topic Ideas and Chapter Arrangements 38
References 39
2 Fabrication, Characterization and Parameter Extraction of InAs Nanowire-Based Device 44
2.1 Growth of InAs Nanowires 44
2.2 Characterization, Device Fabricating and Electrical Measurement Equipment of Nanowires 47
2.2.1 Characterization Equipment 47
2.2.2 Apparatus for Device Fabrication 49
2.2.3 Apparatus to Characterize the Electrical Properties of Devices 52
2.3 Fabrication Processes of InAs Nanowires Devices 52
2.3.1 Dispersion and Transfer of InAs Nanowires 52
2.3.2 General Fabrication Process for Planar InAs Nanowire Devices 53
2.3.3 Fabrication Process for Suspended InAs Nanowire Devices 56
2.4 Measurement and Characterization of InAs Nanowire Devices 58
2.5 Extraction of Basic Electrical Parameters of InAs Nanowires Based on FETs 60
References 63
3 The Impact of Quantum Confinement Effects on Electrical Properties of InAs Nanowires 65
3.1 Growth of Ultrathin InAs Nanowire 65
3.2 High-Performance Device Based on Ultrathin InAs Nanowires 67
3.3 Influences of Diameter on the InAs Nanowire Devices 68
3.3.1 Influences of Diameter on the OFF-State Performance of InAs Nanowire Devices 68
3.3.2 Larger Bandgap Induced by Smaller Diameter of InAs Nanowires 70
3.3.3 Influence of Diameter on ON-State Performance of InAs Nanowire Devices 72
3.4 Summary 74
References 74
4 Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires 76
4.1 Growth of InAs Nanowires in Different Orientations 77
4.2 Method of Transferring Nanowires in Devices to TEM for Structural Characterization 78
4.3 Determination of the Crystal Orientation 82
4.4 Influence of Crystal Phase and Orientation on the Electrical Transport Properties of InAs Nanowires at Room Temperature 83
4.4.1 Comparison of Device Performance with Different Crystal Structure 83
4.4.2 Statistical Analysis on Device Parameters 85
4.5 Influence of Crystal Phase and Crystal Orientation of InAs Nanowires on Electrical Transport Properties at Low Temperature 87
4.5.1 Influence of Crystal Phase and Crystal Orientation on the Contact Properties of InAs Nanowires 88
4.5.2 Influence of Crystal Phase and Crystal Orientation of InAs Nanowires on the Barrier Height at OFF-State 90
4.6 Possible Mechanism for Influence of Crystal Phase and Crystal Orientation on the Electrical Properties of InAs Nanowires 90
4.6.1 Influence of Changes in the Band Structure 91
4.6.2 Influence of Changes in Surface Structures and Surface States 92
4.7 Summary 93
References 94
5 Influence of Different Growth Methods on the Electrical Properties of InAs Nanowires 96
5.1 InAs Nanowires Grown by MBE and MOCVD 97
5.2 Comparison of Electrical Properties Between MBE and MOCVD Grown InAs Nanowires 98
5.2.1 Comparison Between the Device Performance of InAs Nanowires Grown by Different Growth Methods with the Same Diameter 98
5.2.2 Relation Between ON-OFF Ratio and Diameter of InAs Nanowire FETs 98
5.2.3 Qualitative Understanding of the Effect of Growth Methods on the ON-OFF Ratio of InAs Nanowire FET 101
5.2.4 Finite Element Simulation of InAs Nanowires with Different Doping Concentration 104
5.3 Summary 106
References 107
6 Summary and Outlook 108
Appendix Experimental Parameters for Device Preparation 110
A.1 Locating Nanowires 110
A.2 Treatment on Surface Oxide Layer of InAs at Source-Drain Contact 111
A.3 ALD Deposition of High-k Dielectric Layers 113