Ferroelectricity in Doped Hafnium Oxide

Uwe Schroeder has been Deputy Scientific Director at NaMLab in Dresden, Germany, since 2009. His primary research focuses include material properties of ferroelectric hafnium oxide and the integration of the material into future devices. As a project manager, he researched high-k dielectrics and their integration into DRAM capacitors, and it was during this work that the previously unknown ferroelectric properties of doped HfO2-based dielectrics were discovered. He has focused on a detailed understanding of these new material properties and their integration into memory devices ever since. Cheol Seong Hwang has been a Professor in the Department of Materials Science and Engineering at Seoul National University, Korea, since 1998. He is a recipient of the Alexander von Humboldt fellowship award, the 7th Presidential Young Scientist Award of the Korean government, and AP Faculty Excellence Award, Air Products, USA. His interests include high-k gate oxide, DRAM capacitors, new memory devices including RRAM/PRAM, ferroelectric materials and devices, and thin-film transistors. Hiroshi Funakubo is a Professor of the Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, Japan. He received the Richard M. Fulrath Award from the American Ceramic Society in 2008. His specific areas of interest include the preparation and properties of dielectric, ferroelectric, and piezoelectric films.

1. Fundamentals of Ferroelectric and piezoelectric properties 2. HfO2 processes 3. Dopant screening for optimization of the ferroelectric properties 4. Electrode screening for capacitor applications 5. Phase transition 6. Switching kinetics 7. Impact of oxygen vacancies 8. Epitaxial growth of ferroelectric HfO2 9. Thickness scaling Chapter 10. Simulation/Modelling 11. Structural characterization on a nanometer scale: PFM, TEM 12. Comparison to standard ferroelectric materials 13. FE HfO2 based devices