Group III-Nitride Nanowires for Optoelectronic Control of Nitrogen-Vacancy Centers in Diamond

Nanowires are used to overcome limitations of epitaxial thin film growth, and to improve the crystal quality of semiconductors. Here, group III-nitride nanowires were employed for two approaches: (i) The development of highly-strained coaxial heterostructures to explore novel optoelectronic and sensing applications; (ii) Exploiting the intrinsic waveguide geometry and electronic properties of gallium nitride nanowires to improve the read-out performance of nitrogen-vacancy centers in diamond.