Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors - Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao

Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

Buch | Softcover
115 Seiten
2018 | 1st ed. 2018
Springer Verlag, Singapore
978-981-13-2570-0 (ISBN)
58,84 inkl. MwSt
This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.

Introduction to SiC and Thermoelectrical Properties.- Fundamentals of Thermoelectrical Effect in SiC.- Desirable Features for High Temperature SiC Sensors.- Fabrication of SiC MEMS Sensors.- Impact of Design and Process on Performance of SiC Thermal Devices.- Applications of Thermoelectrical Effect in SiC.- Future prospects of SiC Thermoelectrical Sensing Devices.

Erscheinungsdatum
Reihe/Serie SpringerBriefs in Applied Sciences and Technology
Zusatzinfo 60 Illustrations, color; 6 Illustrations, black and white; XI, 115 p. 66 illus., 60 illus. in color.
Verlagsort Singapore
Sprache englisch
Maße 155 x 235 mm
Themenwelt Naturwissenschaften Chemie Analytische Chemie
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 981-13-2570-7 / 9811325707
ISBN-13 978-981-13-2570-0 / 9789811325700
Zustand Neuware
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