Two-Dimensional Semiconductors
Wiley-VCH (Verlag)
978-3-527-34496-3 (ISBN)
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Jingbo Li is Professor at State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences. He received his PhD degree from Institute of Semiconductors, Chinese Academy of Sciences at 2001, and then he spent around 6 year at Lawrence Berkeley National Laboratory and in USA. Since 2007, he is a professor at Institute of Semiconductors, Chinese Academy of Sciences. His research interests including the design, fabrication and application of novel low-dimensional nanostructured semiconductors. He has published more than 210 scientific publications.
1 INTRODUCTION
1.1 Background
1.2 Types of 2D materials
1.3 Perspective of 2D materials
2 ELECTRONIC STRUCTURE of 2D SEMICONDUCTING ATOMIC CRYSTALS
2.1 Theoretical methods for study of 2D semiconductors
2.2 Electronic structure of 2D semiconductors
2.3 Prediction of novel properties in 2D Moiré heterostructures
3 TUNING THE ELECTRONIC PROPERTIES of 2D MATERIALS by SIZE CONTROL, STRAIN ENGINEERING and ELECTRIC FIELD MODULATION
3.1 Size Control
3.2 Strain Engeering
3.3 Electric Field Modulation
4 TRANSPORT PROPERTIES of TWO-DIMENSIONAL MATERIALS: THEORETICAL STUDIES
4.1 Symmetry-dependent Spin Transport Properties of Graphene-like Nanoribbons
4.2 Charge transport properties of two-dimensional materials
4.3 Contacts between 2D semiconductors and metal electrodes.
5 PREPARATION and PROPERTIES of 2D SEMICONDUCTORS
5.1 Preparation methods
5.2 Characterizations of 2D semiconductors
5.3 Electrochemical properties of 2D semiconductors
6 PROPERTIES of 2D ALLOYING AND DOPING
6.1 Introduction
6.2 Advantages of 2D alloys
6.3 Characterizations of 2D alloys
6.4 Doping of 2D semiconductors
7 PROPERTIES of 2D HETEROSTRUCTURES
7.1 conception and categories of 2D heterostructures
7.2 Advantages and application of 2D heterostructures
7.3 Preparation methods for 2D heterostructures
7.4 Characterizations of 2D heterostructures
8 APPLICATION IN (OPTO) ELECTRONICS
8.1 Field-effect transistors
8.2 Infrared photodetectors
8.3 2D photodetectors with sensitizers
8.4 New infrared photodetectors with narrow bandgap 2D semiconductors
8.5 Future outlook
9 PERSPECTIVE AND OUTLOOK
Erscheinungsdatum | 01.04.2020 |
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Verlagsort | Weinheim |
Sprache | englisch |
Maße | 170 x 244 mm |
Gewicht | 508 g |
Themenwelt | Naturwissenschaften ► Chemie |
Technik ► Elektrotechnik / Energietechnik | |
Technik ► Maschinenbau | |
Schlagworte | Components & Devices • Electrical & Electronics Engineering • Electronic materials • Elektronische Materialien • Elektrotechnik u. Elektronik • Halbleiterphysik • Komponenten u. Bauelemente • Materials Science • Materialwissenschaften • Physics • Physik • Semiconductor physics |
ISBN-10 | 3-527-34496-9 / 3527344969 |
ISBN-13 | 978-3-527-34496-3 / 9783527344963 |
Zustand | Neuware |
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