Early Stages of Oxygen Precipitation in Silicon

Oxygen-related defects in silicon: Studies using stress-induced alignment.- The initial stages of oxygen aggregation in silicon: Dimers, hydrogen and selfinterstitials.- Infrared studies of the early stages of oxygen clustering in silicon.- Magnetic resonance investigations of thermal donors in silicon.- Magnetic resonance on heat treatment centres in silicon.- Effect of hydrogen on oxygen-related defect reactions in silicon at elevated temperatures.- Passivation of thermal donors by atomic hydrogen.- Oxygen-carbon, oxygen-nitrogen and oxygen-dimer defects in silicon.- The role of trivalent oxygen in electrically active complexes.- Hydrogen-oxygen interactions in silicon.- Oxygen diffusion in silicon: The influence of hydrogen.- Generation of thermal donors, nitrogen-oxygen complexes and hydrogen-oxygen complexes in silicon.- The electronic structure of the oxygen donor in silicon from piezospectroscopy.- Low temperature diffusion and agglomeration of oxygen in silicon.- Roles of structural defects and contaminants in oxygen precipitation in silicon.- Various forms of isolated oxygen in semiconductors.- Oxygen-related luminescence centres created in Czochralski silicon.- The nitrogen-pair oxygen defect in silicon.- Thermal double donors in silicon: A new insight into the problem.- Interaction of positrons with vacancy-oxygen complexes and oxygen clusters in silicon.- Formation of thermal donors in Czochralski grown silicon under hydrostatic pressure up to lGPa.- Complexes of oxygen and group II impurities in silicon.- Copper and oxygen precipitation during thermal oxidation of silicon: A TEM and EBIC study.- Computer simulated distribution of defects formed during Cz-Si crystal growth.- A small angle neutron scattering study of oxygen precipitation in silicon.- Atomic composition, structure and vibrational excitation of substitutional carbon-oxygen complexes in silicon.- Influence of isovalent doping on the processes of thermal donors formation in silicon.- Some properties of oxygen-related radiation induced defects in silicon and germanium.- Defect profiling of oxygen-related defects using a slow positron beam.- Shallow N-0 donors in silicon.- The C-Si-0-Si(?C) four-member ring and the Si-G15 centre.- Kinetics of oxygen loss and thermal donor formation in silicon: The rapid diffusion of oxygen clusters.- Molecular dynamics study of oxygen defects in silicon.- A kinetic model for precipitation of oxygen in silicon.- Oxygen gettering and thermal donor formation at post-implantation annealing of silicon.- Carbon-hydrogen-oxygen related centre responsible for the I-line luminescence system.- Luminescence investigations of the interaction of oxygen with dislocations in Cz Si.- An isochronal annealing study of the kinetics of VO and VO2 defects in neutron irradiated Si.- Uniform stress effect on nucleation of oxygen precipitates in Czochralski grown silicon.- On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity.- Low temperature annealing studies of the divacancy in p-type silicon.- Anomalous distribution of oxygen precipitates in a silicon wafer after annealing.- Oxygen precipitation in MCZ silicon: Behaviour and dependence on the origin of raw material and growth conditions.