Complete Guide to Semiconductor Devices
McGraw-Hill Inc.,US (Verlag)
978-0-07-035860-7 (ISBN)
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Part 1 Diodes I - rectifiers: p-n junction diode; p-i-n diode; Schottky-barrier diode; planar-doped-barrier diode; isotype-heterojunction barrier. Part 2 Diodes II - negative resistance: tunnel diode; transferred-electron device (TED); impact-ionization avalanche transit-time (IMPATT); barrier-injection transit-time (BARITT) diode; resonant-tunnelling diode; real-space-transfer (RST) diode. Part 3 Resistive devices: resistor; Ohmie contact. Part 4 Capacitive devices: metal-oxide-semiconductor (MOS) capacitor; charge-coupled device (CCD). Part 5 Switches: metal-insulator-semiconductor switch (MISS); planar-doped barrier switch; amorphous threshold switch. Part 6 Transistor I - field-effect: metal-oxide-semiconductor field-effect transistor (MOSFET). Part 7 Transistors II - potential-effect. Part 8 Transistors III - hot-electron. Part 9 Light sources. Part 10 Photodetectors. Appendices: selected non-semiconductor devices; physical phenomena. (Part contents).
Erscheint lt. Verlag | 1.5.2000 |
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Zusatzinfo | 480 illustrations |
Verlagsort | New York |
Sprache | englisch |
Maße | 165 x 240 mm |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik |
Technik ► Elektrotechnik / Energietechnik | |
ISBN-10 | 0-07-035860-5 / 0070358605 |
ISBN-13 | 978-0-07-035860-7 / 9780070358607 |
Zustand | Neuware |
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