Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications - Min Zhu

Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

(Autor)

Buch | Hardcover
124 Seiten
2017 | 1st ed. 2017
Springer Verlag, Singapore
978-981-10-4381-9 (ISBN)
117,69 inkl. MwSt
This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

Min Zhu received his B.Sc. in Electronics Science and Technology from Hubei University, China in 2009, and completed his Ph.D. in Microelectronics and Solid-State Electronics at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2014. His major research project in Prof. Zhitang Song’s group concerned a Ti-Sb-Te alloy for high-speed and low-power phase change memory. Subsequently, he received an Alexander von Humboldt Research Fellowship and became a post-doctoral fellow working with Prof. Matthias Wuttig at RWTH Aachen University, investigating the crystallization behavior of phase change materials.

Acknowledge.- Abstract.- Introduction.- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials.- Component Optimization of Ti in Ti-Sb2Te3 Phase Change Materials.- Optimization Component Ti0.43Sb2Te3.- Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device.- Phase Change Mechanism of Ti0.43Sb2Te3 Alloy.- Ti0.43Sb2Te3 Based Phase Change Memory Chip.- Summary.- References.- Published Papers and Patents.- Bibliography.

Erscheinungsdatum
Reihe/Serie Springer Theses
Springer Theses
Zusatzinfo 83 Illustrations, black and white; XVI, 124 p. 83 illus.
Verlagsort Singapore
Sprache englisch
Maße 155 x 235 mm
Themenwelt Naturwissenschaften Physik / Astronomie Atom- / Kern- / Molekularphysik
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Schlagworte ABAB Ring Statistics • Electron charge-based mechanism • Non-volatile Memory • Phase Change Mechanism • Phase change memory • Reversible physical phase transition
ISBN-10 981-10-4381-7 / 9811043817
ISBN-13 978-981-10-4381-9 / 9789811043819
Zustand Neuware
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