7th Forum on New Materials - Part C -

7th Forum on New Materials - Part C

Pietro Vincenzini (Herausgeber)

Buch | Softcover
114 Seiten
2017
Trans Tech Publications Ltd (Verlag)
978-3-0357-1122-6 (ISBN)
128,40 inkl. MwSt
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7th Forum on New Materials (CIMTEC 2016)


Proceedings of the 7th Forum on New Materials, including the 5th International Conference “Smart and Multifunctional Materials, Structures and Systems” and the 11th International Conference “Medical Applications of New Biomaterials and Nanotechnology, June 5-9, 2016, Perugia, Italy
The Part C of publications by results of 7th Forum on New Materials (CIMTEC 2016, Perugia, Italy, June 5-9, 2016) consists from articles are devoted to researching of properties, methods of synthesis and the possible use of the photocatalytic materials, functional nanomaterials for new generation of solid state gas sensors, materials and new concepts for creating of non-volatile memory devices.

Preface
Chapter 1: Photocatalytic Materials
Z-Scheme over all Water Splitting on Rh/K4Nb6O17 Nanosheets Photocatalyst
Bismuth Vanadate-Based Photoelectrodes for Photoelectrochemical Water Splitting: Synthesis and Characterisation
Grafting of TiO2 on PMMA Film and Reusability in Photodegradation of Organic Dye
Photocatalytic Activation of TiO2 Biomaterials by UV and X-Rays
Chapter 2: Nanomaterials for Solid State Gas Sensors
Investigating the Selective Behaviour of CuO in Gas Sensing Applications
Sensitivity and Selectivity of SnO2-Based Sensor for CO and H2 Detections: A Novel Method to Detect Simultaneously the CO and H2 Concentrations
Enhanced Gas Sensing Properties of Different ZnO 3D Hierarchical Structures
Green Synthesis of Biopolymer-Silver Nanocomposites for Gas Sensing
Sensing Properties of Diode-Type Gas Sensors
Chapter 3: Non-Volatile Memory Devices
Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides
The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials
Integrating MTJ Devices into a 130nm CMOS Process Flow
Toward Sub-20 nm Magnetic Tunnel Junction for Embedded Cache Memory
Memory Loss in a Tantalum Oxide Memristor

Erscheinungsdatum
Reihe/Serie Advances in Science and Technology
Zusatzinfo Illustrations, unspecified
Verlagsort Zurich
Sprache englisch
Maße 170 x 240 mm
Gewicht 340 g
Themenwelt Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 3-0357-1122-4 / 3035711224
ISBN-13 978-3-0357-1122-6 / 9783035711226
Zustand Neuware
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