Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN (eBook)

Li He received his B.S. degree from Nanjing University of Posts and Telecommunications in 1982, his M.S. in Electrical Engineering from the University of Electro and Communications (Japan) in 1985, and his Ph.D. in Electrical Engineering from Hokkaido University (Japan) in 1988. He was a Humboldt researcher at the Institute of Physics, Wuerzburg University (Germany) from 1990 to 1992 and subsequently worked at Purdue University, USA, from 1992 to 1994. Then he served as an associate professor at Hokkaido University, focusing on the interface electron quantum in 1994. Since 1994, he has been working at Shanghai Institute of Technical Physics, Chinese Academy of Sciences. He is currently a full professor at Shanghai Institute of Technical Physics, and the director of its Academic Committee. He is also the director of the Key Laboratory of Infrared Imaging Materials and Devices, Chinese Academy of Sciences. His research chiefly focuses on infrared electro-optical materials and devices. Dingjiang Yang received his degree in Semiconductor Physics from the University of Jilin(China) in 1984. From 1984 to 2009, he was a faculty member at the North China Research Institute Of Electro-Optics (NCRIEO). After leaving the NCRIEO, he was the chairman of the China Optics and Optoelectronics Manufacturers Association (COEMA) from 2009 to 2015. Since December 2015 he has been the Chairman of Tianjin Lishen Battery Joint-Stock Co. Ltd. His research mainly focuses on InSb and HgCdTe detectors. Guoqiang Ni is a professor at Beijing Institute of Technology (BIT), Beijing, China. He graduated from Fudan Univ., Shanghai, China and received his bachelor’s degree in Nuclear Physics in 1967. Later, he completed his Master’s and Ph.D. in Optical Engineering at BIT, in 1983 and 1989. Since January 1983 he has been a faculty member of BIT’s Opto-electronics School. His research focuses on Optical Engineering, Photo-electronics Devices/Technologies/Systems, Image Processing, etc.

Preface 5
Contents 7
1 Fundamentals of Focal Plane Arrays 11
1.1 History and Trends of Infrared Imaging Detectors 11
1.2 Introduction to Advanced FPAs of HgCdTe and AlGaN 15
1.2.1 Outline 15
1.2.2 Improving DRI Range by High Spatial and Temperature Resolutions 17
1.2.2.1 Johnson’s Criteria 17
1.2.2.2 Approach for Large-Scale (High Spatial Resolution) HgCdTe FPAs 18
1.2.2.3 Approach for High Sensitivity (Temperature Resolution) HgCdTe FPAs 19
1.2.3 Improving DRI Range by Multiband Imaging 23
1.2.4 Improving Compactness and Intelligence by Integrated Processing Chip 26
1.3 Summary 26
References 26
2 Design Methods for HgCdTe Infrared Detectors 27
2.1 Introduction 27
2.2 Simulation and Design of HgCdTe Infrared Detectors 28
2.2.1 Foundation for HgCdTe Infrared Detector Designs 28
2.2.1.1 Model of Carrier Density Approximation 29
2.2.1.2 Heterostructure Models 36
2.2.2 Design of Heterojunctions HgCdTe Infrared Detectors 41
2.2.2.1 The Calculation of Band Structure in Heterojunction Devices 41
2.2.2.2 The Influence of Potential Barrier on the Device Performance 45
2.2.3 Design of Long Wavelength HgCdTe Detectors 52
2.2.3.1 R0A and Photocurrent 55
2.2.3.2 Spectral Response 63
2.2.3.3 Thickness of Absorption Layer and Interface Charge Density 67
2.2.4 Design of Two-Color HgCdTe Detector 74
2.2.4.1 Typical Two-Color HgCdTe Detectors 75
2.2.4.2 Numerical Simulation of Spectral Photoresponse 80
2.2.4.3 The Relationship of Spectral Response with Minority Carrier Lifetimes 85
2.2.4.4 The Relationship of Cross Talk with the Barrier Layer 87
2.2.4.5 The Optimum Thickness of the Absorption Layers 90
2.3 Methods of Extracting Parameters from HgCdTe Materials and Chips 93
2.3.1 Extracting Device Parameters by Electrical Method 93
2.3.1.1 Extract Device Parameters for Long Wavelength HgCdTe Photodiodes 93
2.3.1.2 Temperature Dependence for Long Wavelength HgCdTe Photodiodes 101
2.3.1.3 Statistical Analysis of Long Wave HgCdTe Photodiodes 106
2.3.1.4 Statistical Analysis of Mid-Wavelength HgCdTe Photodiodes 109
2.3.2 Extracting Device Parameters by Photoelectric Method 109
2.3.2.1 Photon-Generated Minority Carrier Lifetime 109
2.3.2.2 Laser Beam-Induced Current Microscopy for HgCdTe Photodiodes 114
2.4 Summary 124
References 125
3 CdTe/Si Composite Substrate and HgCdTe Epitaxy 131
3.1 Introduction 131
3.2 Basic Models on Si-Based HgCdTe Epitaxy 132
3.2.1 Physical Model of Selective Growth on Si Surface (Mechanism of as Passivation on Surface) 133
3.2.2 Atomic Distribution Model of Si Substrate ZnTe/CdTe 143
3.2.3 Arsenic Impurity in MCT 150
3.2.4 Amphoteric Doping Behavior of as in MCT 164
3.3 HgCdTe Growth on Si by MBE 183
3.3.1 ZnTe/CdTe Grading Buffer on Si by MBE 183
3.3.2 HgCdTe Growth on Large-size Alternative Substrates 199
3.3.3 Extrinsic Doping in HgCdTe by MBE 207
3.4 Si-Based HgCdTe LPE Technology 229
3.4.1 The Surface Treatment of CdTe/Si Composite Substrate 231
3.4.2 LPE Process Optimization 234
3.4.3 Basic Properties of HgCdTe LPE Materials 237
3.4.4 Remaining Issues and Analysis 246
3.5 Thermal Stress of Si-Based HgCdTe Materials 249
3.5.1 Spectral Characteristics of Si-Based HgCdTe Materials 250
3.5.2 Theoretical Analysis of Stress of Multilayer Structure Materials 255
3.6 Summary 264
References 265
4 AlGaN Epitaxial Technology 274
4.1 Introduction 274
4.2 Basic Properties of GaN-Based Material and Preparation Techniques 275
4.2.1 The Basic Properties of GaN-Based Material and Its Use in Ultraviolet Detectors 275
4.2.2 MOCVD Epitaxial Deposition System and In Situ Monitoring Method 277
4.3 MOCVD Epitaxial Growth Technique of AlGaN Material 288
4.3.1 AlGaN Epitaxial Technology on GaN Buffer Layer 289
4.3.2 AlN Buffer Layer and AlGaN Epitaxial Technique 308
4.3.3 The P-Type Doping Technique of GaN Material 327
4.4 Overall Performance Analysis of AlGaN Material 332
4.4.1 Effects on Optical and Electrical Properties of GaN Material from Dislocations 332
4.4.2 Measurement of Al Components in AlGaN and Determination of Its Strain State 337
4.4.3 Uniformity of AlGaN with High Al Component 343
4.4.4 Oxidation of AlGaN Materials 346
4.5 Summary 351
References 352
5 HgCdTe Detector Chip Technology 360
5.1 Introduction 360
5.2 HgCdTe Detector Chip Processing Technologies 363
5.2.1 Isolation Technology of HgCdTe Micro-Mesa Array 363
5.2.2 Micro-Mesa Photolithography 424
5.2.3 High-Quality Sidewall Passivation Technique of Micro-Mesa Arrays 427
5.2.4 Metallization of Micro-Mesa Array 435
5.2.5 Indium Bump Preparation and Hybridized Interconnection of Micro-Mesa Array 443
5.3 Two-Color Micro-Mesa Detector Chip 449
5.3.1 Selection of Two-Color Detector Chip Architecture 449
5.3.2 Fabrication of Two-Color HgCdTe Micro-Mesa Preliminary Detector 453
5.3.3 Simultaneous 128 × 128 Two-Color HgCdTe IRFPAs Detector 456
5.4 Si-Based HgCdTe Processing Technology 458
5.4.1 Stress Analysis and Structure Design of Si-Based HgCdTe 459
5.4.2 Low Damage Stress Chip Processing Technology of 3-Inch Si-Based HgCdTe Wafer 470
5.5 Summary 480
References 482
6 Chip Technique of AlGaN Focal Plane Arrays 486
6.1 Introduction 486
6.2 AlGaN P–I–N Solar-Blind UV Detectors-Model and Design 487
6.2.1 Material Parameters of AlGaN Thin Films 488
6.2.2 Response Model and Design of AlGaN P–I–N Detector 488
6.3 AlGaN Resonant-Cavity-Enhanced UV Detectors 496
6.3.1 The Basic Structure of Resonant-Cavity-Enhanced UV Detectors 498
6.3.2 Design and Fabrication of RCE Ultraviolet Detectors 500
6.4 AlGaN Detector Chip Fabrication 507
6.4.1 Mesa Formation Technology 509
6.4.2 Passivation of the Chip 532
6.4.3 Ohmic Contact 533
6.5 Irradiation Effects of AlGaN Ultraviolet Detectors 570
6.5.1 Proton Irradiation Effects 571
6.5.2 Electron Irradiation Effects 573
6.5.3 ? Irradiation Effects 579
6.5.4 Irradiation Hardening Study of the GaN-Based UV Detectors 582
6.6 Imaging and Application of UV Focal Plane Assembly 591
6.6.1 Imaging of Quartz Tube Heated by Oxyhydrogen Flame 591
6.6.2 Imaging in Visible-Blind Waveband 592
6.6.3 Imaging of Outside Scene 593
6.6.4 Aerial UV Photographs of Oil on Sea Surface 593
6.7 Summary 594
References 596
7 Readout Integrated Circuit, Measurement, and Testing Technology for Advanced Focal Plane Array 603
7.1 Introduction 603
7.2 Introduction and Development for Readout Integrated Circuit 604
7.3 Dual-Band Readout Integrate Circuit 606
7.3.1 Conventional Topologies of a Dual-Band ROIC 608
7.3.2 The Proposed Topology for a Simultaneous Dual-Band ROIC 620
7.3.3 The Implementation of a Dual-Band Infrared ROIC and an Ultraviolet ROIC 624
7.4 Digital Transmission System on Chip for IRFPA 640
7.4.1 The Architecture of the Digital System for IRFPA 641
7.4.2 Algorithms for the Implementation of ADC on the Focal Plane 646
7.4.3 Implementations for the ADC on Focal Plane 660
7.5 Measurement and Testing Technology for Focal Plane Array 686
7.5.1 Measurement of Parameters for Infrared FPA 687
7.5.2 Measurement of Parameters for Ultraviolet FPA 693
7.6 Summary 695
References 696