Fundamentals of Power Semiconductor Devices - B. Jayant Baliga

Fundamentals of Power Semiconductor Devices

Buch | Softcover
1069 Seiten
2016 | Softcover reprint of the original 1st ed. 2008
Springer-Verlag New York Inc.
978-1-4899-7765-6 (ISBN)
169,98 inkl. MwSt
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.  The treatment focuses on silicon devices and includes the  unique attributes and design requirements for emerging silicon carbide devices.

Material Properties and Transport Physics.- Breakdown Voltage.- Schottky Rectifiers.- P-i-N Rectifiers.- Power MOSFETs.- Bipolar Junction Transistors.- Thyristors.- Thyristors.- Synopsis.

Erscheinungsdatum
Zusatzinfo XXIII, 1069 p.
Verlagsort New York
Sprache englisch
Maße 155 x 235 mm
Themenwelt Naturwissenschaften Chemie Analytische Chemie
Technik Elektrotechnik / Energietechnik
ISBN-10 1-4899-7765-1 / 1489977651
ISBN-13 978-1-4899-7765-6 / 9781489977656
Zustand Neuware
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