Physics-based Simulation of III-V Nitride LEDs: The Role of Polarization
Seiten
2015
|
2015
Hartung-Gorre (Verlag)
978-3-86628-542-2 (ISBN)
Hartung-Gorre (Verlag)
978-3-86628-542-2 (ISBN)
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This work presents a study of polarization effects in III-V nitride LEDs. The goal is to give a complete overview of the effects caused by built-in polarization in those devices using novel numerical simulation approaches.
The first part describes the internal efficacy in LED devices with different polarization, using a semi-classical approach. For the modeling of the LED structure a semi-classical drift-diffusion model developed within the author's research group is used. The effect of different materials and polarizations on the efficacy is studied. A novel method for improving the efficacy using a quaternary AlInGaN material is proposed.
In the second part a new approach for III-V nitride simulation, implementing Non-Equilibrium Greens Functions (NEGF) is presented. NEGF as a fully quantum mechanical simulation provides a better overview of the spatial and energetic distribution of carriers inside the LED structure, and can be used for detailed understanding of the processes taking place in polar and non-polar devices.
The first part describes the internal efficacy in LED devices with different polarization, using a semi-classical approach. For the modeling of the LED structure a semi-classical drift-diffusion model developed within the author's research group is used. The effect of different materials and polarizations on the efficacy is studied. A novel method for improving the efficacy using a quaternary AlInGaN material is proposed.
In the second part a new approach for III-V nitride simulation, implementing Non-Equilibrium Greens Functions (NEGF) is presented. NEGF as a fully quantum mechanical simulation provides a better overview of the spatial and energetic distribution of carriers inside the LED structure, and can be used for detailed understanding of the processes taking place in polar and non-polar devices.
Erscheint lt. Verlag | 3.9.2015 |
---|---|
Reihe/Serie | Series in Microelectronics ; 225 |
Verlagsort | Konstanz |
Sprache | englisch |
Maße | 148 x 210 mm |
Gewicht | 230 g |
Einbandart | Paperback |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Optik |
Schlagworte | carrier transport • energy distribution • III-V Nitride Devices • Nitride LEDs • polarization • scattering |
ISBN-10 | 3-86628-542-6 / 3866285426 |
ISBN-13 | 978-3-86628-542-2 / 9783866285422 |
Zustand | Neuware |
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