Fundamentals of Bias Temperature Instability in MOS Transistors
Springer, India, Private Ltd (Verlag)
978-81-322-2507-2 (ISBN)
Souvik Mahapatra received his Bachelors and Masters degrees in Physics from Jadavpur University, Calcutta, India in 1993 and 1995 respectively and PhD in Electrical Engineering from IIT Bombay, Mumbai, India in 1999. During 2000-2001, he was with Bell Laboratories, Lucent Technologies, Murray Hill, NJ, USA. Since 2002 he is with the Department of Electrical Engineering at IIT Bombay and currently holds the position of full professor. His primary research interests are in the area of semiconductor device characterization, modeling and simulation and in particular, MOS transistor and Flash memory device scaling and reliability. He has contributed in several technologically relevant research areas such as MOS gate insulator scaling, Channel Hot Carrier Degradation and Bias Temperature Instability in CMOS devices and CHISEL NOR Flash, SONOS NOR and NAND Flash and Metal Nanodot NAND Flash memory devices. He has published more than 150 papers in peer reviewed journals and conferences, delivered invited talks and tutorials in major international conferences including at the IEEE IEDM and IEEE IRPS and served as a committee member and session chair in several IEEE conferences. He is a fellow of the Indian National Academy of Engineering, senior member of IEEE and a distinguished lecturer of IEEE EDS.
Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs.- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects.- Physical Mechanism of BTI Degradation – Direct Estimation of Trap Generation and Trapping.- Physical Mechanism of BTI Degradation –Modeling of Process and Material Dependence.- Reaction-Diffusion Model.- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs.- Index.
Reihe/Serie | Springer Series in Advanced Microelectronics ; 52 |
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Zusatzinfo | 67 Illustrations, color; 134 Illustrations, black and white; XVI, 269 p. 201 illus., 67 illus. in color. |
Verlagsort | New Delhi |
Sprache | englisch |
Maße | 155 x 235 mm |
Themenwelt | Naturwissenschaften ► Chemie ► Analytische Chemie |
Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
Technik ► Elektrotechnik / Energietechnik | |
Schlagworte | AC Stress • Bias Temperature Instability • bti • BTI Degradation • BTI in MOSFETs • BTI Recovery • Charge Pumping • DCIV • DC Stress • End-of-life Projection • flicker noise • HKMG • MOSFET • NBTI • PBTI • Reaction-Diffusion Model • SILC • Sion • Trap Occupancy and Trap Generation • Trapping in MOSFET Devices |
ISBN-10 | 81-322-2507-4 / 8132225074 |
ISBN-13 | 978-81-322-2507-2 / 9788132225072 |
Zustand | Neuware |
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