Physics of MOS Insulators (eBook)
382 Seiten
Elsevier Science (Verlag)
978-1-4831-6244-7 (ISBN)
The Physics of MOS Insulators focuses on the experiments, research, and discussions made on MOS insulators. Divided into eight parts and having 72 chapters, the selection features the lengthy literature of contributors in the field of biochemistry who have continuously worked to highlight the structure, properties, applications, processes, experiments, and research done on MOS insulators. Scattered within the numerous chapters of the selection are experiments that are supported by lengthy discussions and data necessary to validate the claims of the authors. Although the chapters cover different topics, generally, they present how MOS insulators have captured the interest of biochemists and other individuals who are interested in this discipline. The papers generally include samples and measurements, observations, discussions, numerical representations, methodologies, conclusions, and recommendations. This book is a dependable source of information for those who are keen enough to study the physics of MOS insulators. This text is highly recommended to biochemists, students, and scholars who find this area of study interesting.
Front Cover 1
The Physics of Mos Insulators 4
Copyright Page 5
Table of Contents 8
FOREWORD 6
PART I: TRANSPORT PROPERTIES 14
CHAPTER 1.
14
ABSTRACT 14
I. INTRODUCTION 15
II. PHYSICS AND MATERIAL CONSIDERATIONS 17
III.
23
IV. CONCLUSIONS 29
ACKNOWLEDGEMENTS 30
REFERENCES 30
CHAPTER 2.
32
ABSTRACT 32
INTRODUCTION 32
SAMPLES AND MEASUREMENTS 32
OBSERVATIONS IN THE INVERSION MODE 32
OBSERVATIONS IN THE ACCUMULATION MODE 35
REFERENCES 36
CHAPTER 3.
37
INTRODUCTION 37
SAMPLE PREPARATION AND MEASUREMENT PROCEDURE 37
RESULTS AND DISCUSSION 39
REFERENCES 41
CHAPTER 4.
42
ABSTRACT 42
INTRODUCTION 42
PHOTOCONDUCTIVITY EQUATIONS 42
NUMERICAL SOLUTION 44
DISCUSSION 44
REFERENCES 46
CHAPTER 5.
47
ABSTRACT 32
INTRODUCTION 32
SAMPLES AND MEASUREMENTS 32
OBSERVATIONS IN THE INVERSION MODE 32
OBSERVATIONS IN THE ACCUMULATION MODE 35
REFERENCES 36
CHAPTER 6.
37
INTRODUCTION 37
SAMPLE PREPARATION AND MEASUREMENT PROCEDURE 37
RESULTS AND DISCUSSION 39
REFERENCES 41
CHAPTER 7.
42
ABSTRACT 42
INTRODUCTION 42
PHOTOCONDUCTIVITY EQUATIONS 42
NUMERICAL SOLUTION 44
DISCUSSION 44
REFERENCES 46
CHAPTER 8.
47
ABSTRACI 47
INTRODUCTION 47
THE TRAPPING ENERGY LEVELS OF MOBILE IONS AT POLY Si/Si02AND Si02/Si INTERFACES MEASURED WITH TSIC 47
DIRECT CALCULATING METHOD ABOUT INITIAL ENERGY DISTRIBUTIONOF MOBILE IONS AMONG THE INTERFACE TRAPPING STATES 48
DISCUSSION 49
ACKNOWLEDGMENT 51
REFERENCES 51
CHAPTER 9. INTERACTIONS BETWEEN SMALL-POLARONIC PARTICLES IN SOLIDS 52
ABSTRACT 52
INTRODUCTION 52
APPROACH 52
EQUIVALENT INTERSTITIALS 53
ELECTRON-HOLE INTERACTIONS 55
REFERENCES 56
CHAPTER 10.
57
ABSTRACT 57
REFERENCES 61
CHAPTER 11.
62
ABSTRACT 62
INTRODUCTION 62
EXPERIMENTAL PROCEDURE AND RESULTS 63
DISCUSSION 66
REFERENCES 66
CHAPTER 12.
67
ABSTRACT 67
INTRODUCTION 67
EXPERIMENTAL 68
RESULTS 68
SOME APPLICATIONS OF THE LATERAL MIS TUNNEL STRUCTURES 71
SUMMARY 71
REFERENCES 71
CHAPTER 13. OXYGEN AS A TWO-LEVEL TUNNELING SYSTEM IN SiO2 72
ABSTRACT 72
INTRODUCTION 72
THEORY AND MODELS 73
PRESENT WORK 74
CONCLUSIONS 75
ACKNOWLEDGEMENT 75
REFERENCES 75
PART II: BULK PROPERTIES 76
CHAPTER 14.
76
INTRODUCTION 76
MDDEL CONSTRUCTION 77
RESULTS 78
DISCUSSION 80
REFERENCES 80
CHAPTER 15.
81
ABSTRACT 81
INTRODUCTION 81
THE MODEL 81
RESULTS 83
REFERENCES 85
CHAPTER 16.
86
ABSTRACT 86
INTRODUCTION 86
RESULTS 87
DISCUSSION 89
REFERENCES 89
CHAPTER 17.
90
ABSTRACT 90
INTRODUCTION 90
THIN FILM DEPOSITION AND CHARACTERIZATION 90
RAMAN SPECTROSCOPY 92
ACKNOWLEDGEMENTS 94
REFERENCES 94
CHAPTER 18.
95
ABSTRACT 95
CALCULATION OP THE PHONON DENSITY OP STATES 95
LOCAL DENSITY OP STATES 96
INTERMEDIATE-RANGE ORDER OF THE ATOMIC STRUCTUREQg AMORPHOPS'-STo: 97
COULOMB INTERACTIONS AND LO-TO SPLITTING 98
REFERENCES 99
CHAPTER 19.
100
ABSTRACT 100
INTRODUCTION 100
EXPERIMENTAL METHODS 101
RESULTS AND DISCUSSION 101
REFERENCES 104
CHAPTER 20.
105
ABSTRACT 105
INTRODUCTION 105
Si-0 BOND OVERLAP POPULATION AND ENERGY 106
THE IONICITY OF THE Si-0 BOND 106
PROPERTIES OF VITREOUS Si02 108
ACKNOWLEDGMENT 109
REFERENCES 109
PART III:
110
CHAPTER 21.
110
ABSTRACT 110
INTRODUCTION 110
PSEUDO-JAHN-TELLER APPROACH 111
DISCUSSION 113
REFERENCES 114
CHAPTER 22.
115
ABSTRACT 115
INTRODUCTION 115
METHOD 116
RESULTS AND DISCUSSION 117
REFERENCES 119
CHAPTER 23.
120
ABSTRACT 120
INTRODUCTION 120
IDEALIZED Si/SiO« INTERFACES 120
PERIODIC ARRAYS OF DEFECTS IN SiQ2 SUPERCELLS 122
DEALING WITH DEFECTS CLOSE TO IDEALIZED INTERFACES 124
REFERENCES 124
CHAPTER 24.
125
ABSTRACT 125
INTRODUCTION 125
EXPERIMENTAL 126
RESULTS AND DISCUSSION 126
CONCLUSIONS 129
REFERENCES 129
CHAPTER 25.
130
ABSTRACT 130
INTRODUCTION 130
EXPERIMENT 130
RESULTS AND DISCUSSIONS 132
ACKNOWLEDGEMENTS 134
REFERENCES 134
CHAPTER 26.
135
ABSTRACT 135
INTRODUCTION 135
EXPERIMENTAL TECHNIQUE 136
RESULTS AND DISCUSSION 136
CONCLUSIONS 139
REFERENCES 139
CHAPTER 27.
140
ABSTRACT 140
INTRODUCTION 140
EXPERIMENTAL DETAILS 140
RESULTS 141
ANALYSIS 141
DISCUSSION 143
ACKNOWLEDGEMENTS 144
REFERENCES 144
CHAPTER 28.
145
ABSTRACT 145
INTRODUCTION 145
EXPERIMENTAL DETAILS 145
RESULTS 146
REFERENCES 149
CHAPTER 29.
150
ABSTRACT 150
INTRODUCTION 150
EXPERIMENT 151
RESULTS AND DISCUSSION 151
ACKNOWLEDGMENT: 154
REFERENCES: 154
CHAPTER 30.
155
ABSTRACT 155
INTRODUCTION 155
EXPERIMENTAL PROCEDURE AND DETAILS 155
RESULTS AND ANALYSIS 157
DISCUSSION 158
ACKNOWLEDGEMENT 159
REFERENCES 159
CHAPTER 31.
160
ABSTRACT 160
INTRODUCTION 160
EXPERIMENTAL DETAILS 160
RESULTS AND DISCUSSION 161
ACKNOWLEDGEMENT 163
REFERENCES 164
PART IV:
165
CHAPTER 32.
165
ABSTRACT 165
INTRODUCTION 165
EXPERIMENTAL 166
RESULTS 167
SUMMARY 168
ACKNOWLEDGEMENT 169
REFERENCES 169
CHAPTER 33.
170
ABSTRACT 170
INTRODUCTION 170
EXPERIMENTAL 170
RESULTS 171
DISCUSSION 173
SUMMARY 173
ACKNOWLEDGMENTS 173
REFERENCES 174
CHAPTER 34.
175
INTRODUCTION 175
EXPERIMENT 176
DATA ANALYSIS 177
CONCLUSIONS 178
REFERENCE 179
CHPTER 35.
180
ABSTRACT 180
INTRODUCTION 180
EXPERIMENTAL PROCEDURES 181
RESULTS 181
DISCUSSION 184
REFERENCES 184
CHAPTER 36.
185
ABSTRACT 185
INTRODUCTION 185
EXPERIMENTAL 185
RESOLUTION ENHANCEMENT/DECONVOLUTION 186
RESULTS AND DISCUSSION 187
CONCLUSIONS 188
ACKNOWLEDGMENTS 189
REFERENCES 189
CHAPTER 37.
190
ABSTRACT 190
INTRODUCTIOJ 190
PROCEDURE 190
RESULTS 191
DISCUSSIONS AND CONCLUSIONS 191
REFERENCES 193
PART V:
194
CHAPTER 38.
194
ABSTRACT 194
INTRODUCTION 194
EXPERIMENTAL 195
RESULTS AND DISCUSSION 195
SUMMARY 202
Acknowledgements 203
References 203
CHAPTER 39.
204
ABSTRACT 204
INTRODUCTION 204
EXPERIMENTAL TECHNIQUE 205
DISCUSSION OF RESULTS 205
Conclusions 208
Acknowledgements 208
References 208
CHAPTER 40.
210
ABSTRACT 210
INTRODUCTION 210
EXPERIMENTAL 210
RESULTS AND DISCUSSION 210
REFERENCES 214
CHAPTER 41.
215
References 219
CHAPTER 42.
InP 220
Introduction 220
Experimental 220
Results and Discussion 221
Conclusions 224
References 224
CHAPTER 43.
225
ABSTRACT 225
INTRODUCTION 225
EXPERIMENTAL RESULTS 225
REFERENCES 229
CHAPTER 44.
230
INTRODUCTION 230
EXPERIMENTAL 230
RESULTS 231
REFERENCES 233
PART VI:
234
CHAPTER 45.
234
ABSTRACT 234
INTRODUCTION 234
EXPERIMENT 234
THE Sid 11) - SiQ2 INTERFACE 235
THE AI · SiQ2 INTERFACE 236
THE Au · SiQ2 INTERFACE 237
CONCLUSIONS 238
ACKNOWLEDGEMENTS 239
REFERENCES 239
CHAPTER 46.
240
INTRODUCTION 240
THEORY 240
EXPERIMENTAL 242
RESULTS 243
DISCUSSION 244
REFERENCES 244
CHAPTER 47.
245
INTRODUCTION 245
EXPERIMENT 245
ANALYSIS 245
CONCLUSIONS 247
REFERENCES 248
CHAPTER 48.
249
ABSTRACT 249
REFERENCES 253
CHAPTER 49.
254
ABSTRACT 254
INTRODUCTION 254
FORMULATION OF HAMILTONIAN 255
MODEL AND CALCULATION PROCEDURE 255
RESULTS 256
CONCLUSIONS 257
ACKNOWLEDGMENT 257
REFERENCES 258
CHAPTER 50.
259
ABSTRACT 259
INTRODUCTION 259
GENERATION OF ROUGHNESS BY ION SPUTTERING 259
EXPERIMENTAL 260
RESULTS AND DISCUSSION 261
CONCLUSIONS 262
REFERENCES 262
CHAPTER 51.
263
ABSTRACT 263
INTRODUCTION 263
EXPERIMENTAL PROCEDURE 264
RESULTS AND DISCUSSION 264
CONCLUSIONS 267
REFERENCES 267
CHAPTER 52.
268
ABSTRACT 268
INTRODUCTION 268
EXPERIMENTAL 268
RESULTS AND DISCUSSION 269
REFERENCES 272
CHAPTER 53.
273
ABSTRACT 273
INTRODUCTION 273
THE EFFECT OF HYDROGEN ON PALLADIUM WORK FUNCTION 273
THE EFFECT OF SODIUM ON MERCURY WORK FUNCTION 274
CHANGES IN ADHESION BETWEEN PALLADIUM M D SILICON DIOXIDE 275
HYDROGEN INDUCED DRIFT IN PD GATE MOS DEVICES 275
THE EFFECT OF HYDROGEN ON ION DRIFT IN PD GATE MOS CAPACITORS 276
CONCLUSION 277
REFERENCES 277
CHAPTER 54.
278
ABSTRACT 278
INTRODUCTION 278
EXPERIMENTAL METHOD 278
RESULTS 279
REFERENCES 282
CHAPTER 55.
283
ABSTRACT 283
INTRODUCTION 283
SURFACES OF GaAs AND InP 283
MIS STRUCTURES ON GaAs AND ÃçÑ 285
TECHNOLOGICAL IMPLICATIONS AND PROSPECTS 286
REFERENCES 287
ACKNOWLEDGMENTS 287
CHAPTER 56.
288
ABSTRACT 288
INTRODUCTION 288
EXPERIMENTAL 288
RESULTS 289
DISCUSSION 290
CHAPTER 57.
293
ABSTRACT 293
REFERENCES 297
PART VII:
298
CHAPTER 58.
298
ABSTRACT 298
INTRODUCTION 298
SAMPLE PREPARATION AND EXPERIMENTAL TECHNIQUES 298
GENERATION OF INTERFACE STATES 299
ANNEALING PROPERTIES OF THE INTERFACE STATES 300
CONCLUSIONS 301
ACKNOWLEDGEMENT 302
REFERENCES 302
CHAPTER 59.
303
ABSTRACT 303
INTRODUCTION 303
EXPERIMENTAL TECHNIQUES 304
CHARGING EFFECTS IN XPS 304
ELECTRON-GENERATED TRAPS AT THE OXIDE/VACUUM SURFACE 305
INTERFACE STATE GENERATION 306
CONCLUSIONS 307
ACKNOWLEDGMENTS 308
REFERENCES 308
CHAPTER 60.
309
ABSTRACT 309
INTRODUCTION 309
DEFECT DISTRIBUTION IN Si-SiO? SYSTEM 309
EXPERIMENTAL DETAILS 311
EXPERIMENTAL RESULTS AND DISCUSSIONS 311
CONCLUSION 313
ACKNOWLEDGEMENTS 313
REFERENCES 313
CHAPTER 61.
314
ABSTRACT 314
INTRODUCTION 314
BONDING DEFECTS IN a-SiOp 315
THE LOCAL ATOMIC STRUCTURE OF Qcc 316
ELECTRONIC STRUCTURE OF 0*(3Ô) 316
SUMMARY 317
ACKNOWLEDGEMENT 317
REFERENCES 318
CHAPTER 62.
319
ABSTRACT 319
INTRODUCTION 319
EXPERIMENTAL 319
RESULTS AND DISCUSSION 320
CONCLUDING REMARKS 323
REFERENCES 323
CHAPTER 63.
324
ABSTRACT 324
INTRODUCTION 324
SAMPLE PREPARATION AND MEASUREMENT TECHNIQUES 324
EXPERIMENTAL RESULTS 325
DISCUSSION AND CONCLUSIONS 327
ACKNOWLEDGEMENT 328
REFERENCES 328
CHAPTER 64.
329
ABSTRACT 329
INTRODUCTION 329
EXPERIMENTAL 330
SEGREGATION MODELING 331
SUMMARY 333
REFERENCES 333
CHAPTER 65.
334
ABSTRACT 334
INTRODUCTION 334
EXPERIMENTAL 335
RESULTS 335
SIMS 335
DISCUSSION 337
ACKNOWLEDGEMENT 338
REFERENCES 338
CHAPTER 66.
339
ABSTRACT 339
INTRODUCTION 339
EXPERIMENTAL DETAILS 340
RESULTS AND DISCUSSION 341
CONCLUDING REMARKS 342
ACKNOWLEDGMENT 343
REFERENCES 343
CHAPTER 67.
344
ABSTRACT 344
INTRODUCTION 344
EXPERIMENTAL DETAILS 344
RESULTS 345
DISCUSSION - CONCLUSION 347
ACKNOWLEDGEMENT 348
REFERENCES 348
PART VIII:
349
Chapter 68. nomalous gate current on avalanche hot electron injectionin MOS structures
349
ABSTRACT 349
INTRODUCTION 349
SAMPLE PREPARATION 349
EXPERIMENTAL TECHNIQUE 350
EXPERIMENTAL RESULTS 350
DISCUSSION 351
CONCLUSION 353
ACKNOWLEDGEMENT 353
REFERENCES 353
CHAPTER 69.
354
DISCUSSION 356
REFERENCES 356
CHAPTER 70.
357
ABSTRACT 357
INTRODUCTION 357
PREPARATION OF DIACETYLENE LANGMUIR FILM STRUCTURES 357
DIACETYLENE POLYMER FILM CHARACTERISTICS 359
MIS CHARACTERISTICS 359
CONCLUSION 361
ACKNOWLEDGEMENTS 361
REFERENCES 361
CHAPTER 71. MOS WEAROUT AND BREAKDOWN STATISTICS 362
ABSTRACT 362
INTRODUCTION 362
EXPERIMENTAL 362
RESULTS 363
DISCUSSION 364
CONCLUSIONS 365
ACKNOWLEDGMENTS 365
REFERENCES 365
CHAPTER 72.
366
ABSTRACT 366
INTRODUCTION 366
EXPERIMENTAL DETAILS 366
RESULTS AND DISCUSSIONS 367
CONCLUSION 369
REFERENCES 369
LIST OF
372
AUTHOR INDEX 381
Erscheint lt. Verlag | 22.10.2013 |
---|---|
Sprache | englisch |
Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Elektrodynamik |
Technik | |
ISBN-10 | 1-4831-6244-3 / 1483162443 |
ISBN-13 | 978-1-4831-6244-7 / 9781483162447 |
Haben Sie eine Frage zum Produkt? |
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