Festkorper Probleme (eBook)

Front Cover 1
Festkörper Probleme XIII: Advances in Solid State Physics 4
Copyright Page 5
Table of Contents 7
Foreword 6
Chapter 1. Electronic Properties of Two Dimensional Solids: The Layer Type Transition Metal Dichalcogenides 10
1. Introduction 10
2. Optical properties 11
3. Band structure 18
4. Excitons, thickness effects, and screening of excitons 23
5. Electrical, magnetic and superconducting properties 26
6. Intercalate compounds with organic molecules 27
7. Intercalates with alkali and alkaline earth metals 34
8. Intercalates with transition metals 35
10. Conclusions 36
References 37
Chapter 2. Electronic Properties of One-Dimensional Solid State Systems 40
1. Introduction 40
2. Chemistry and Structural Chemistry of 1-D potentially metallic systems 42
3. Physical Concepts for the Description of 1-D Potentially Metallic Systems 48
4. Experimental Situation 54
5. Summary and Outlook 63
References 65
Chapter 3. Compound Semiconductor Alloys 68
1. Introduction 68
2. Alloy Band Structure 69
3. The Alloy Sample and Measurement of Its Band Structure 78
4. Applications 83
5. Concluding Remarks 89
Acknowledgments 91
References 91
Chapter 4. Van der Waals Attraction In and Between Solids 94
1. Introduction 94
2. Applications 95
3. Schematic classification 97
4. Many-electron Schrödinger formalism 99
5. Electromagnetic modes 103
6. Dispersion energy 108
7. Concluding remarks 112
References 115
Chapter 5. Properties of Highly Excited Semiconductors (Experimental Aspects) 120
1. Introduction 120
2. Experimental 122
3. Effects in direct-gap semiconductors 124
4. Effects in indirect-gap semiconductors 139
5. Futher comments 145
References 149
Chapter 6. Properties of Highly Excited Semiconductors (Theoretical Aspects) 154
Introduction 154
1. Electron-hole plasma in germanium 155
2. Scattering and bound states in high-density exciton systems 163
3. Condensation in high-density exciton systems 172
Acknowledgements 176
References 176
Chapter 7. Binding Energy of Excitons Bound to Defects: Theoretical Aspects 180
1. Introduction 180
2. Bound exciton complexes with Coulomb interaction 181
3. Electron-phonon interaction 188
4. Influence of the defect 195
5. Excited states of bound excitons 197
6. Excitons bound to isoelectronic impurities 198
7. Final remarks 198
Acknowledgements 198
References 199
Chapter 8. Photoelectron Spectroscopy of Solids 202
1. Introduction 202
2. Principles of operation 203
3. General scope of results 205
4. Core level results 209
5. Valence band density of states 214
6. Conclusion 220
Acknowledgements: 220
References 220
Chapter 9. Surface Quantization in Semiconductors 224
Historical review 224
Surface quantization 226
Theoretical description of surface quantization 227
Approximate calculations 232
Electric quantum limit 232
Accumulation layer 234
Two-dimensional electron gas in a magnetic field 235
Quantum size effects in semiconducting thin films 236
Scattering of a two-dimensional electron gas 238
Experimental investigations of surface quantum phenomena 239
References 246
Chapter 10. On the Physics of Clean Silicon Surfaces 250
1. Introduction 251
2. Preparation of Clean Silicon Surfaces 252
3. Silicon (111) Surfaces 255
4. Silicon (100) Surfaces 273
Achnowledgements: 280
References 280
Chapter 11. Low-Energy Electron Diffraction for Surface Structure Analysis 284
1. Introduction 284
2. The LEED experiment 285
3. The kinematic theory 286
4. The multiple scattering theory of LEED 289
5. Results of the multiple scattering theory for LEED 297
6. Averaging methods for LEED data analysis 309
Acknowledgements 313
References 314
Chapter 12. Fundamentals of MOS Technology 318
1. Introduction 318
2. MOS capacitor 319
3. Technology 323
4. Barrier energies 326
5. Oxide charges 328
6. Interface states 331
7. Electronic conduction in the oxide 335
8. Ion implantation effects 338
9. Devices 339
References 343
Chapter 13. Charge Transfer Devices 346
1. Introduction 346
2. The three basic charge-transfer devices 348
3. Analysis of the charge-transfer process 352
4. Comparison of MOS BB, SCCD, and BCCD 361
5. Technological and material aspects 364
6. Conclusion 365
Acknowledgements 366
References 366
Chapter 14. Effects of Electrons on Phonon Spectra and Structural Phase Transitions 368
1. Introduction 368
2. Microscopic formulation of lattice dynamics 369
3. Adiabatic harmonic approximation (AHA) 371
4. Electron screening in Wannier representation 374
5. Free-energy functional and structural phase transitions 376
References 381
Chapter 15. The Pressure Variable in Solid State Physics: What About 4f-Band Superconductors? 384
Introduction 384
1. The electronic instability of the cerium atom under pressure 385
2. Lanthanum is a 4f-band superconductor 392
3. A phenomenological attempt to understand the pressure-induced superconductivity of cesium and barium 397
4. Concluding remarks 402
Acknowledgements 403
References 404