Compact Modeling -

Compact Modeling

Principles, Techniques and Applications

Gennady Gildenblat (Herausgeber)

Buch | Softcover
527 Seiten
2014
Springer (Verlag)
978-94-007-9324-8 (ISBN)
139,99 inkl. MwSt
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group.
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Compact Models of MOS Transistors.- Surface-Potential-Based Compact Model of Bulk MOSFET.- PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs.- Benchmark Tests for MOSFET Compact Models.- High-Voltage MOSFET Modeling.- Physics of Noise Performance of Nanoscale Bulk MOS Transistors.- Compact Models of Bipolar Junction Transistors.- to Bipolar Transistor Modeling.- Mextram.- The HiCuM Bipolar Transistor Model.- Compact Models of Passive Devices.- Integrated Resistor Modeling.- The JUNCAP2 Model for Junction Diodes.- Surface-Potential-Based MOS Varactor Model.- Modeling of On-chip RF Passive Components.- Modeling of Multiple Gate MOSFETs.- Multi-Gate MOSFET Compact Model BSIM-MG.- Compact Modeling of Double-Gate and Nanowire MOSFETs.- Statistical Modeling.- Modeling of MOS Matching.- Statistical Modeling Using Backward Propagation of Variance (BPV).

Erscheint lt. Verlag 30.9.2014
Zusatzinfo XVII, 527 p.
Verlagsort Dordrecht
Sprache englisch
Maße 155 x 235 mm
Themenwelt Naturwissenschaften Chemie Analytische Chemie
Naturwissenschaften Physik / Astronomie Festkörperphysik
Technik Elektrotechnik / Energietechnik
ISBN-10 94-007-9324-3 / 9400793243
ISBN-13 978-94-007-9324-8 / 9789400793248
Zustand Neuware
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