Nanoscale Phenomena in Ferroelectric Thin Films -

Nanoscale Phenomena in Ferroelectric Thin Films

Seungbum Hong (Herausgeber)

Buch | Softcover
288 Seiten
2014 | Softcover reprint of the original 1st ed. 2004
Springer-Verlag New York Inc.
978-1-4613-4771-2 (ISBN)
213,99 inkl. MwSt
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I.
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well­ known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high­ density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.

I. Electrical Characterization in Nanoscale Ferroelectric Capacitor.- I. Testing and characterization of ferroelectric thin film capacitors.- II. Size effects in ferroelectric film capacitors: role of the film thickness and capacitor size.- III. Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy.- IV. Nanoscale domain dynamics in ferroelectric thin films.- V. Polarization switching and fatigue of ferroelectric thin films studied by PFM.- II Nano Domain Manipulation and Visualization in Ferroelectric Materials.- VI. Domain switching and self-polarization in perovskite thin films.- VII. Dynamic-contact electrostatic force microscopy and its application to ferroelectric domain.- VIII. Polarization and charge dynamics in ferroelectric materials with SPM.- IX. Nanoscale investigation of MOCVD-Pb(Zr,Ti)O3 thin films using scanning probe microscopy.- X. SPM measurements of ferroelectrics at MHz frequencies.- XI Application of ferroelectric domains in nanometer scale for high- density storage devices.

Reihe/Serie Multifunctional Thin Film Series
Zusatzinfo XIV, 288 p.
Verlagsort New York, NY
Sprache englisch
Maße 155 x 235 mm
Themenwelt Naturwissenschaften Chemie Organische Chemie
Naturwissenschaften Chemie Physikalische Chemie
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
ISBN-10 1-4613-4771-8 / 1461347718
ISBN-13 978-1-4613-4771-2 / 9781461347712
Zustand Neuware
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