Toward Quantum FinFET
Springer International Publishing (Verlag)
978-3-319-02020-4 (ISBN)
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, and tunneling transport.
Preface
Chapter 1: Simulation of Quantum Ballistic Transport in FinFETs
Chapter 2: Model for quantum confinement in nanowires and the application of this model to the study of carrier mobility in nanowire FinFETs
Chapter 3: Understanding the FinFET Mobility by Systematic Experiments
Chapter 4: Quantum Mechanical Potential Modeling of FinFET
Chapter 5: Physical insight and correlation analysis of finshape fluctuations and work-function variability in FinFET devices
Chapter 6: Characteristic and Fluctuation of Multi-Fin FinFETs
Chapter 7: Variability in Nanoscale FinFET Technologies
Chapter 8: Random Telegraph Noise in Multi-Gate FinFET/Nanowire Devices and the Impact of Quantum Confinement
Chapter 9: Investigations on Transport Properties of Poly-Silicon Nanowire Transistors Featuring Independent Double-Gated Configuration under Cryogenic Ambient
Chapter 10: Towards Drain extended FinFETs for SoC applications
Chapter 11: Modeling FinFETs for CMOS Applications
Chapter 12: Enhanced Quantum Effects in Room-Temperature Coulomb Blockade Devices Based on Ultrascaled finFET Structure
Chapter 13: Single-Electron Tunneling Transistors Utilizing Individual Dopant Potentials
Chapter 14: Single Electron Transistor and Quantum Dots on Graphene
Chapter 15: Terahertz Response in Schottky Warp-Gate Controlled Single Electron Transistors
Index
| Erscheint lt. Verlag | 13.12.2013 |
|---|---|
| Reihe/Serie | Lecture Notes in Nanoscale Science and Technology |
| Zusatzinfo | XI, 363 p. 235 illus., 168 illus. in color. |
| Verlagsort | Cham |
| Sprache | englisch |
| Maße | 155 x 235 mm |
| Gewicht | 724 g |
| Themenwelt | Naturwissenschaften ► Physik / Astronomie ► Atom- / Kern- / Molekularphysik |
| Naturwissenschaften ► Physik / Astronomie ► Festkörperphysik | |
| Technik ► Elektrotechnik / Energietechnik | |
| Schlagworte | CMOS-compatibility • FinFET • FinFET Quantum Mechanical Potential Modelling • FinFET Quantum Phenomena • FinFET Quantum Transport Simulation • FinFETs, Electrical Transport • FinFET Technologies, Device Variability • Fin Shape Fluctuation, FinFETs • Funneling Transport • Gate-all-around Nanowire MOSFETs • Highly Scaled SiGe/Si Core/Shell Nanowire • High Voltage FinFETs for SoC Applications • MOSFET • MOSFET (MOS-Feldeffekt-Transistor) • Mulgi-gate FinFET • Nanofabrication • Nonplanar FinFet • Novel Nanoscale Transistors for Semiconductors • Quantized Conductance 1D Transport • quantum confinement • Quantum Confinement Effect of FinFET • Quantum Dots on Graphene • Quantum FinFET and Nanotechnology • Quantum FinFET Electronics • Quantum Transport • Schottky Warp-Gate Controlled Single Electron Tran • Schottky Warp-Gate Controlled Single Electron Transistor • Silicon Nanowire • Single Electron Effect • Single Electron Transistor, Graphene • Work-function Variability, FinFETs |
| ISBN-10 | 3-319-02020-X / 331902020X |
| ISBN-13 | 978-3-319-02020-4 / 9783319020204 |
| Zustand | Neuware |
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