III-Nitride Semiconductors and their Modern Devices

Bernard Gil was hired at CNRS in 1982 as an Associate Researcher, before being appointed Director of Research in 1995. He was granted the degree of Doctor Honoris Causa from the University of Saint Petersburg in July 2012. He is currently directing the Institute of Physics at Montpellier.

1. Development of the nitride-based UV/DUV LEDs ; 2. The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays ; 3. Epitaxial growth and benefits of GaN on silicon ; 4. The growth of bulk aluminum nitride ; 5. Epitaxial growth of nitride quantum dots ; 6. Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics ; 7. Growth and optical properties of aluminum rich AlGaN heterostructures ; 8. Optical and structural properties of InGaN light emitters on non- and semipolar GaN ; 9. GaN-based single-nanowire devices ; 10. Advanced photonic and nanophotonic devices ; 11. Nitride-based electron devices for high power / high frequency applications ; 12. Intersubband transitions in low dimensional nitrides ; 13. The slow light in gallium nitride ; 14. Nitride devices and their biofunctionalization for biosensing applications ; 15. Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides ; 16. Terahertz emission in polaritonic systems with nitrides