Intelligent Integrated Systems

Simon Deleonibus retired from CEA-LETI on January 1, 2016, as chief scientist after 30 years of research on the architecture of micro- and nanoelectronic devices. Before joining CEA-LETI, he was with Thomson Semiconductors (1981–1986), where he developed and transferred to production advanced microelectronic devices and products. He obtained his PhD in applied physics from Paris University (1982). He is a visiting professor at Tokyo Institute of Technology (Tokyo, Japan) since 2014, National Chiao Tung University (Hsinchu, Taiwan) since 2015, and Chinese Academy of Science (Beijing, PRC) since 2016. A recipient of several awards and honors, and erstwhile associate editor of the IEEE Transactions on Electron Devices (2008-2014), Prof. Deleonibus is research director of the CEA since 2002, a distinguished lecturer at IEEE since 2004, and a fellow of the IEEE since 2006 and of the Electrochemical Society since 2015.

Advanced Silicon-Based CMOS Technologies. From Planar to Trigate and Nanowires Fully Depleted Transistors. Schottky Source/Drain MOSFETs. Advances in Silicon-On-Diamond Technology. GeOI, SiGeOI and New Devices Architectures. 3D Monolithic Integration. III-V Quantum-Well FETs. Carbon Integrated Electronics. New Paths to Augmented Silicon CMOS Technologies. Tunneling Field-Effect Transistors – Challenges and Perspectives. Molecular Memories. Resistive Memories. High frequency vibrating nanowire. Spintronics. Smart Multiphysics Sensors. 3D Integration and Wafer Level Packaging.