Fundamental Physics of Amorphous Semiconductors -

Fundamental Physics of Amorphous Semiconductors

Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8—11, 1980

F. Yonezawa (Herausgeber)

Buch | Softcover
VIII, 184 Seiten
2011 | 1. Softcover reprint of the original 1st ed. 1981
Springer Berlin (Verlag)
978-3-642-81606-2 (ISBN)
106,99 inkl. MwSt
Organized by Research Institute for Fundamental Physics (RIFP), Kyoto University
The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on "Particle Physics and Accelerator Projects" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon ductor group in Japan. A few years ago, we started to organize an interna tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on "Physics of Semiconductors" held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open.

What are Non-Crystalline Semiconductors.- Defects in Covalent Amorphous Semiconductors.- Surface Effects and Transport Properties in Thin Films of Hydrogenated Silicon.- The Past, Present and Future of Amorphous Silicon.- Doping and the Density of States of Amorphous Silicon.- The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon.- New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si1-xGex and a-GaAs.- Chemical Bonding of Alloy Atoms in Amorphous Silicon.- Photo-Induced Phenomena in Amorphous Semiconductors.- Theory of Electronic Properties of Amorphous Semiconductors.- Some Problems of the Electron Theory of Disordered Semiconductors.- The Anderson Localisation Problem.- Summary Talk.- Seminars Given During the KSI '80.- Photograph of the Participants of the KSI '80.- List of Participants.

Erscheint lt. Verlag 30.12.2011
Reihe/Serie Springer Series in Solid-State Sciences
Zusatzinfo VIII, 184 p. 5 illus.
Verlagsort Berlin
Sprache englisch
Maße 155 x 235 mm
Gewicht 305 g
Themenwelt Naturwissenschaften Chemie Physikalische Chemie
Technik Maschinenbau
Schlagworte Amorpher Halbleiter • atoms • density • electron • Germany • Low-dimensional systems • Particle physics • Physics • Research • semiconductor • semiconductors • Silicon • Surface • Thin Films • Transport
ISBN-10 3-642-81606-1 / 3642816061
ISBN-13 978-3-642-81606-2 / 9783642816062
Zustand Neuware
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