Frontiers in Nanoscale Science of Micron/Submicron Devices

I. Nanotechnologies.- Submicron Technology.- Ultra Fine Particles and Coatings.- 3-D Patterned III-V Semicondutor Devices Using High Energy In-Situ Focused Ion Beam Lithography and MBE.- Real Time 3-D Patterned Crystal Growth of GaAs Using a Low Energy Focused Ion Beam and Molecular Beam Epitaxy.- Mesoscopic Structure-Formation and Quantum Properties of Heteroepitaxy of InAs/GaAs.- Van der Waals Epitaxy of Transition Metal Dichalcogenides Using Metal Organic Precursors (MOVDWE).- Thin Film Epitaxial Growth by Laser Ablation.- Nanostructuring of Silicon by Laser Direct Writing.- Si(001) Surface Passivation caused by Bi Adsorption.- II. Characterization.- Applications of Scanning Force Microscopy.- An Elliptically Polarized Synchrotron Radiation Beam Line and Its Applications.- The Potential of Electron Spectroscopy and Scanning Tunnelling Microscopy for the Study of Semiconducting Nanostructures.- Optical Characterization of Surfaces at IR and VIS Energies.- Optical Techniques for Probing Semiconductor Surfaces and Interfaces.- Nanoscale Characterization of Interfaces in Micron/Submicron Structures.- III. Fundamental Properties of Micro/Nanostructures.- Electron Interference at III-V Heterointerfaces: Physics and Devices.- Non-Equilibrium Mesoscopic Physics: Microwave-Induced Coherent Transport in Two-Dimensional Semiconductor Microstructures.- Influence of Fluctuations of Widths of Single Quantum Wells on Photoluminescence Properties in Metallo-Organic Compounds of Hydride Epitaxial GaAs / ALxGa1-xAs Heterostructures.- Accurate Modeling of Double Barrier Resonant Tunneling Diodes.- Mechanisms of the Tunnel Current Formation in Double Barrier Resonant Tunneling Structures.- Quantum Well Structures Based on the Layered Compounds InSe and GaSe Grown by Van der Waals Epitaxy.- Frequency Properties of Planer Microwave Detector.- Noise in Silicon Structures with Bicrystallites.- Fundamental Properties and Nanoscale Aspects of Schottky Barriers.- Size Effects in Properties of Metal-Semiconductor Structures with Schottky Barriers.- New Terminations for Planar Schottky Structure (PSS).- Metal (Cr, Mo, W)-GaAs Contacts.- Dislocation Displacement in Silicon Structures.- Effect of Substrate Defects in the Luminescent Properties of Porous Silicon Layers.- On the Kinematics of Amorphization under Ion Implantation.- IV. Basic Physics of Novel Nanostructures.- Lateral Superlattices: Classical, Semi-Classical, and Quantum Mechanical Transport Phenomena.- Transport Studies in Semiconductor Heterostructures.- Equilibrium and Nonequilibrium Optical Effects in Semiconductor Heterostructures.- Observation of Scaling Behavior in a Coulomb Blockade System.- Dynamic Quantum Wells and Quantum Dots in MIS-Microstructure with Periodic Field Electrodes.- Disordered Superlattices.- Si/Ge Superlattices: A Step Towards Si-Based Optoelectronics.- Low Frequency Admittance of Quantized Hall Conductors.- Screening in Two-Dimensional Electron Liquid.- Dielectric Function of Matrix Disperse Systems with Nanoscale Conducting Inclusions Exhibiting Quantum Size Properties.- Photograph.- List of Participants.