Metal-Dielectric Interfaces in Gigascale Electronics (eBook)

Thermal and Electrical Stability
eBook Download: PDF
2012 | 2012
XI, 149 Seiten
Springer New York (Verlag)
978-1-4614-1812-2 (ISBN)

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Metal-Dielectric Interfaces in Gigascale Electronics -  Ming He,  Toh-Ming Lu
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Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying  the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate  interface phenomena and the principles that govern them.

Metal-Dielectric Interfaces in Gigascale Electronics  provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.
Metal-dielectric interfaces are ubiquitous in modern electronics. As advanced gigascale electronic devices continue to shrink, the stability of these interfaces is becoming an increasingly important issue that has a profound impact on the operational reliability of these devices. In this book, the authors present the basic science underlying the thermal and electrical stability of metal-dielectric interfaces and its relationship to the operation of advanced interconnect systems in gigascale electronics. Interface phenomena, including chemical reactions between metals and dielectrics, metallic-atom diffusion, and ion drift, are discussed based on fundamental physical and chemical principles. Schematic diagrams are provided throughout the book to illustrate interface phenomena and the principles that govern them. Metal-Dielectric Interfaces in Gigascale Electronics provides a unifying approach to the diverse and sometimes contradictory test results that are reported in the literature on metal-dielectric interfaces. The goal is to provide readers with a clear account of the relationship between interface science and its applications in interconnect structures. The material presented here will also be of interest to those engaged in field-effect transistor and memristor device research, as well as university researchers and industrial scientists working in the areas of electronic materials processing, semiconductor manufacturing, memory chips, and IC design.

Preface1. Introduction1.1 Metal-dielectric interfaces in IC chips1.2 Materials choices1.3 Thermal and electrical stability2. Metal-Dielectric Diffusion Processes: Fundamentals2.1  Thermal diffusion2.2  Field-enhanced ion drift2.3  Thermodynamics and chemical interactions2.4  Summary3. Experimental Techniques3.1 Test structures3.2 Electrical measurements3.3 Elemental characterizations3.4 Summary4. Al-Dielectric Interfaces4.1 Al-SiO2 interface4.2 Al/low-k dielectric interfaces4.3 Chemical identification of Al-ion drift4.4 SiO2 as a dielectric barrier against Al-ion drift4.5 Summary5. Cu-Dielectric Interfaces5.1 Stability of Cu-SiO2 in an oxygen-free environment5.2 Instability of Cu-SiO2 in an oxygen-containing environment5.3 Origin of Cu ions in SiO25.4 Cu ion diffusivity inside SiO25.5 Cu ions in porous low-k dielectrics5.6 Pre-cleaning of Cu/low-k dielectrics5.7 Cu atoms in porous low-k dielectrics5.8 Dielectrics containing no oxygen5.9 Summary6. Barrier Metal-Dielectric Interfaces6.1 Barrier metals on SiO26.2 Barrier metals on low-k dielectrics7. Self-Forming Barriers7.1 General considerations7.2 Cu(Al) self-forming barrier7.3 Cu(Mg) self-forming barrier            7.4. Cu(Mn) self-forming barrier7.5 Refractory metal self-forming barrier alloys7.6 Summary8. Kinetics of Ion Drift8.1 Ion distribution simulations8.2 Leakage current8.3 C-V characteristics8.4 Summary9. Time-Dependent Dielectric Breakdown (TDDB) and Future Directions9.1 Time-dependent dielectric breakdown (TDDB)9.2 Dielectric pore-sealing9.3 Resistance-switching memory9.4 Summary

Erscheint lt. Verlag 2.2.2012
Reihe/Serie Springer Series in Materials Science
Zusatzinfo XI, 149 p. 120 illus., 48 illus. in color.
Verlagsort New York
Sprache englisch
Themenwelt Naturwissenschaften Chemie Physikalische Chemie
Naturwissenschaften Physik / Astronomie
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
Schlagworte cu interconnect technology • Flatband voltage shifts in metal-dielectric- • Fundamental science metal-dielectric interfaces • Low-k dielectrics • Metal atom diffusion and metal ion drift in dielectrics • Metal-dielectric interface • Metal-dielectric interfaces book • Metal-dielectric interfaces experimental techniques • Metal-dielectric interfaces stability • Metal-dielectric interfaces stability book • semiconductor capacitors • Thermal and electric stability of metal-dielectric interfaces
ISBN-10 1-4614-1812-7 / 1461418127
ISBN-13 978-1-4614-1812-2 / 9781461418122
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