Polarization Effects in Semiconductors (eBook)

From Ab Initio Theory to Device Applications

Debdeep Jena, Colin Wood (Herausgeber)

eBook Download: PDF
2007 | 2008
XIV, 515 Seiten
Springer US (Verlag)
978-0-387-68319-5 (ISBN)

Lese- und Medienproben

Polarization Effects in Semiconductors -
Systemvoraussetzungen
160,49 inkl. MwSt
  • Download sofort lieferbar
  • Zahlungsarten anzeigen

This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.


Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures.  These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices.The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures.  It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects.  In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered.  The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "e;Polarization Effects in Semiconductors"e; DOD funded Multi Disciplinary University Research Initiative.  This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications.  It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Preface 5
Contributors 7
Contents 9
Theoretical Approach to Polarization Effects in Semiconductors 14
1 Introduction 14
2 Basic Electrostatics 15
3 Polarization 17
4 Ab Initio Calculations of the Electronic Structure 18
5 Modern Theory of Polarization 19
6 Polarization at Interfaces: Interface Dipoles 23
7 Spontaneous Polarization in theWurtzite Structure: BeO 25
8 GaN/AlN Superlattice: Spontaneous Polarization and Piezoelectricity 26
9 Electric Field-Driven Diffusion and Segregation of Dopants in Superlattices 29
10 Summary 36
References 37
Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors 39
1 Introduction 39
2 First-Principles Prediction of Structural and Pyroelectric Properties 41
3 Lattice Constants, Average Bond Length and Bond Angles in Ternary Compounds 42
4 Polarity 52
5 Growth of Undoped AlGaN/GaN, InGaN/GaN and AlInN/GaN Hetero- and Nanostructures 53
6 Non-Linear Spontaneous and Piezoelectric Polarization in Group- III- Nitrides 54
7 Polarization Induced Surface and Interface Charges 68
8 Sheet Carrier Concentration of Polarization Induced 2DEGs 73
9 Sensors Based on Polarization Induced 2DEGs 86
10 Summary 112
References 115
Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: 122
1 Polar Heterostructures: What Do They Offer? 122
2 Theoretical Approach 128
3 Tailoring of Vertical Junctions 139
4 Nitride HFETS: Transport Issues 145
5 Smart HFETs: Multi-Functional Devices 153
6 Conclusions 165
References 165
Polarization Effects on Low-Field Transport & Mobility in III- V Nitride HEMTs
1 Introduction 171
2 Polarization-Induced 2DEGs in AlGaN/GaN HEMTs 173
3 Scattering Mechanisms 181
4 Using Theory to Explain Experimental Data 204
5 Summary and Conclusions 208
6 Appendix on the Theory of Low-Field Transport & Mobility
References 224
Local Polarization Effects in Nitride Heterostructures and Devices 227
1 Introduction 227
2 Polarization-Based Engineering of Nitride Heterostructures 235
3 Localized Effects of Polarization 253
References 270
Polarization inWide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy 275
1 Introduction 275
2 III-N and SiC Heterostructures 279
3 Interface and Surface Charge in SiC and III-N Heterojunctions 284
4 SPM Characterization of Heterostructures 295
5 Summary 312
References 313
Functionally Graded Polar Heterostuctures: New Materials for Multifunctional Devices 316
1 Introduction 316
2 Graded Polar Nitride Semiconductor Heterostructures 317
3 Universal Physics of Functionally Graded Ferroelectric and Ferromagnetic Alloys 354
4 Summary and Challenges 377
References 377
Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors ( HFETs) 382
Introduction 382
1 Heterojunction Field Effect Transistors (HFETs) 385
2 AlGaN/GaN HFET Performance 433
References 466
Effects of Polarization in Optoelectronic Quantum Structures 476
1 Introduction 476
2 Basic Elements of the Theory of Polarization in III-V Nitride Heterostructures 477
3 Experimental Manifestation of Polarization Fields in Group-III Nitride Based Nanostructures 503
4 Conclusion 515
References 516
Index 521

Erscheint lt. Verlag 16.10.2007
Zusatzinfo XIV, 515 p.
Verlagsort New York
Sprache englisch
Themenwelt Naturwissenschaften Physik / Astronomie
Technik Elektrotechnik / Energietechnik
Technik Maschinenbau
Schlagworte ab Initio theory • defects • Design • Development • Electrical Engineering • field-effect transistor • Field Effect Transistors • Heterostructures • Material • Microscopy • Physics • Polarization Effects • semiconductor • Semiconductor Devices • semiconductors • Sensor • Solid state physics • Thin Films • Transistor • Transport • Wood
ISBN-10 0-387-68319-4 / 0387683194
ISBN-13 978-0-387-68319-5 / 9780387683195
Haben Sie eine Frage zum Produkt?
PDFPDF (Wasserzeichen)
Größe: 36,4 MB

DRM: Digitales Wasserzeichen
Dieses eBook enthält ein digitales Wasser­zeichen und ist damit für Sie persona­lisiert. Bei einer missbräuch­lichen Weiter­gabe des eBooks an Dritte ist eine Rück­ver­folgung an die Quelle möglich.

Dateiformat: PDF (Portable Document Format)
Mit einem festen Seiten­layout eignet sich die PDF besonders für Fach­bücher mit Spalten, Tabellen und Abbild­ungen. Eine PDF kann auf fast allen Geräten ange­zeigt werden, ist aber für kleine Displays (Smart­phone, eReader) nur einge­schränkt geeignet.

Systemvoraussetzungen:
PC/Mac: Mit einem PC oder Mac können Sie dieses eBook lesen. Sie benötigen dafür einen PDF-Viewer - z.B. den Adobe Reader oder Adobe Digital Editions.
eReader: Dieses eBook kann mit (fast) allen eBook-Readern gelesen werden. Mit dem amazon-Kindle ist es aber nicht kompatibel.
Smartphone/Tablet: Egal ob Apple oder Android, dieses eBook können Sie lesen. Sie benötigen dafür einen PDF-Viewer - z.B. die kostenlose Adobe Digital Editions-App.

Buying eBooks from abroad
For tax law reasons we can sell eBooks just within Germany and Switzerland. Regrettably we cannot fulfill eBook-orders from other countries.

Mehr entdecken
aus dem Bereich

von Horst Kuchling; Thomas Kuchling

eBook Download (2022)
Carl Hanser Verlag GmbH & Co. KG
24,99
Grundlagen - Verfahren - Anwendungen - Beispiele

von Jens Bliedtner

eBook Download (2022)
Carl Hanser Verlag GmbH & Co. KG
49,99